IRFR540ZTRRPBF

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IRFR540ZTRRPBF is a single n-channel power MOSFET designed to reduce the R DS(ON) and gate charge Q G. It is an advanced MOSFET developed to meet higher frequency application by introducing a new structure with a lightly doped guardring surrounding the floating channel region. This feature effectively reduces the capacitances between drain and source, resulting in faster switching, reduced on-state resistance (R DS(ON)) and switching losses.

Application Field

The IRFR540ZTRRPBF is suitable for numerous applications in the commercial, industrial and automotive sector such as power converters and power switching for DC/DC converters, high frequency drivers and inductive slewing drivers. It can be used for AC and DC power switches, high frequency switching, and hot-swap switching.

Other applications include motor drives, power inverters, power rectifiers, power supplies, and UPS applications in a variety of roles such as voltage regulators, high-power-factor regulators and high-voltage power supplies. It is also suitable for LED lighting systems and lighting switching.

This device is designed for high-performance low-power circuits. It has a wide range of applications in consumer electronics and computer systems where low power consumption and reliability are required. Its low on-resistance enables it to provide high-performance power switching.

Working Principle

This device is a vertical power MOSFET with an insulated gate, which is based on a new and improved structure. It utilizes a slightly doped guard ring that surrounds the floating channel and reduces capacitances between drain and source for a faster switching operation and minimization of switching losses.

The structure consists of an insulated layer on the inner periphery of the guard ring, which is surrounded by N-doped and P-doped regions. The junctions between these regions form capacitances between source and drain and the gate is connected to the source through this insulated layer. When a positive Gate-Source Voltage (V GS) is applied, a vertical electric field is formed that causes the conduction of current between source and drain.

This device can operate over a wide range of frequencies and high switching speed, making it an ideal choice for modern high-power applications. It also provides excellent reduced on-state resistance (R DS(ON)), which ensures efficient power conversion and low power consumption.

The IRFR540ZTRRPBF is a single n-channel power MOSFET and is available in both TO-220AB and TO-263AB packages. This device has a maximum drain source voltage of 20V, a gate-source voltage range of 1.5V to 6V, and a power rating of 100W. It also offers a reverse drain-source breakdown voltage of -12V, a maximum drain current of 23A, and an average on-state resistance of only 0.0099Ω.

The IRFR540ZTRRPBF is a low-cost, reliable solution for power switching applications, particularly those requiring high-frequencies and current-carrying capabilities. It is suitable for a wide range of power-supply applications, from consumer electronics to industrial and automotive applications. The fast switching speed and reduced on-state resistance enable efficient power conversion, thus saving energy. Additionally, its guard ring structure provides enhanced protection against electrostatic discharges and its low-power consumption makes it an ideal choice for modern low-power applications.

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