Allicdata Part #: | IRFR3911TRPBF-ND |
Manufacturer Part#: |
IRFR3911TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 14A DPAK |
More Detail: | N-Channel 100V 14A (Tc) 56W (Tc) Surface Mount D-P... |
DataSheet: | IRFR3911TRPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 115 mOhm @ 8.4A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 740pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 56W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The IRFR3911TRPBF is a type of power MOSFET, designed to increase the efficiency of an electric circuit. It is an insulated gate field effect transistor (IGFET) with a vertical structure. This particular MOSFET has a relatively high current rating and an exceptional dV/dt capability.
The main application fields for the IRFR3911TRPBF include motor and solenoid control, as well as power supply circuits, motor control interfaces, and AC/DC and DC/DC switching regulators. It is also used in load switching circuits, LED lighting applications, and frequency converters. Due to its design and technical capabilities, the IRFR3911TRPBF can often replace bipolar transistors in a range of automation, lighting, and energy conversion applications.
The working principle of this MOSFET is based on the principle of minority charge carriers, or electrons and holes. The principle states that minority carriers are stored on the oxide surface of the semiconductor substrate, as defined by the density of the oxide layer. When a gate voltage is applied to the gate contact, it creates an electric field which attracts the stored charge carriers. This creates a conducting channel from source to drain and enables the MOSFET to act as a switch.
The IRFR3911TRPBF is designed to handle up to 10mA continuous drain current at a voltage of between -55V to -100V. It has a breakdown voltage of -100V and an on resistance of less than 0.7 ohms. It also has impressive dV/dt capabilities, capable of operating at up to 400V/ms switching speeds. The MOSFET is designed to handle high frequency power conversion applications, and can operate at up to 100MHz frequencies.
The IRFR3911TRPBF has superior power handling capabilities and can dissipate up to 10W, making it suitable for a range of industrial, automation and power conversion applications. It is available in a SMD package with a thermal impedance of 95°C/W. This makes it suitable for surface mount device (SMD) assembly.
In conclusion, the IRFR3911TRPBF is a single power MOSFET which is ideal for applications such as motor and solenoid control, frequency converters, load switching, and AC/DC and DC/DC switching regulators. It has excellent current and voltage capabilities, as well as impressive dV/dt and thermal characteristics, making it suitable for a range of applications in the industrial and commercial sectors.
The specific data is subject to PDF, and the above content is for reference
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