IRFR12N25DTRRP

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IRFR12N25DTRRP is a unique field effect transistor (FET) that offers improved performance and robustness compared to conventional FETs. Specifically, it is a high-power insulated-gate bipolar transistor (IGBT) featuring low on-state resistance, low switching losses, and low thermal resistance. The device is a monolithic integrated device containing both the FET and the bipolar components and is suitable for a wide range of applications.

The IRFR12N25DTRRP is a single-gate FET, meaning that it has only one electrical gate instead of two or more, as is the case with dual and multi-gated FETs. The single gate allows for a greater control over the device\'s operation, giving it improved efficiency. It is also designed with a high power rating, making it suitable for use in higher power applications. The device is also protected against electrostatic discharge and offers good thermal stability.

The working principle of the IRFR12N25DTRRP utilizes the FET\'s gate to create a negative voltage, which controls the flow of current between the device\'s source and drain terminals. When the gate voltage is increased, the device will turn ON, allowing current to flow from the source to the drain. As the gate voltage is decreased, the device will turn OFF, stopping the current flow. This, in turn, causes the device to be used as a switch in many applications. The control of current is also known as the current gain, which is also known as Saturation Current Gain (gm).

The IRFR12N25DTRRP has a wide range of applications, including automotive power circuits, industrial power systems, motor controllers, home appliances, and power supplies. It is also widely used in electric vehicles and solar applications due to its high power rating, low on-state resistance, and low switching losses. Its low thermal resistance also makes it suitable for use in high temperature and high current applications, such as high efficiency solar cells or high-voltage circuits.

The IRFR12N25DTRRP is versatile and reliable FET, making it an ideal solution for many applications. It has a high power rating and low on-state resistance for improved efficiency and reliability, and its single gate design makes it easy to control. The device is also protected from electrostatic discharge and has a low thermal resistance for better thermal stability. With its various features and applications, the IRFR12N25DTRRP is an excellent device for many purposes.

The specific data is subject to PDF, and the above content is for reference