Allicdata Part #: | IRFR3504TRRPBF-ND |
Manufacturer Part#: |
IRFR3504TRRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 30A DPAK |
More Detail: | N-Channel 40V 30A (Tc) 140W (Tc) Surface Mount D-P... |
DataSheet: | IRFR3504TRRPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 9.2 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 71nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2150pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 140W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The IRFR3504TRRPBF is a single-to-dual N-MOSFET transistor field-effect transistor. It is designed for protective, motive drive and high-speed switching. This transistor operates on low-power consumption and offers high-frequency switching. It also has increased surge protection and a low on-resistance. The IRFR3504TRRPBF is designed to application field such as LED lighting and automotive with integrated circuit, batteries and electronic circuits.
The working principle of IRFR3504TRRPBF is based on the field-effect transistor technology. This transistor works by acquiring the electrical and magnetic field which pumps the electrons into the drain to create a channel between the source and the drain. The transistor has an N-MOSFET structure which helps in producing low-power consumption, low switching loss, and high frequency switching.
The channel created between the source and the drain helps in controlling the current through the channel. The output from the source to the drain can be regulated and controlled by adjusting the voltage applied to the gate of the transistor. The gate voltage can be regulated by a voltage source or current source, which results in a decrease or increase in the current flowing through the transistor.
The IRFR3504TRRPBF is composed of three terminals; Source, Drain and Gate. In most applications, the gate of the transistor is connected to the gate drive circuit and the drain is connected to the load. The source is connected to the power supply and the transistor is controlled by the amount of voltage applied to the gate. The control voltage can control the current which results in switching of the device.
The device has low-power consumption and high frequency switching which makes it suitable for the LEDs. It has low on-resistance which reduces the switching loss and improves the efficiency of the transistor. It\'s built-in surge protection also makes it ideal for applications in automobile systems and other electronic circuits such as integrated circuits, batteries, and consumer electronics.
In conclusion, the IRFR3504TRRPBF is a single-to-dual N-MOSFET transistor field-effect transistor designed for protection, motive drive and high-speed switching. It features low-power consumption and high-frequency switching which makes it ideal for LED lighting and automobile systems. The transistor has three terminals; Source, Drain and Gate which can be controlled by a voltage or current source. It\'s integrated surge protection also adds to its application in integrated circuits, batteries, and consumer electronics.
The specific data is subject to PDF, and the above content is for reference
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