Allicdata Part #: | IRFR3711ZTRRPBF-ND |
Manufacturer Part#: |
IRFR3711ZTRRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 93A DPAK |
More Detail: | N-Channel 20V 93A (Tc) 79W (Tc) Surface Mount D-Pa... |
DataSheet: | IRFR3711ZTRRPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 93A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 5.7 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 2.45V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2160pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 79W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IRF3711ZTRRPBF is a type of single N-channel enhancement mode field effect transistor. It is classified under transistors, FETs and MOSFETs, and is widely used in power supply, power control and protection circuits, as well as in the various control and switching applications. This article will discuss the application field and working principle of IRF3711ZTRRPBF.
IRF3711ZTRRPBF is a silicon field-effect transistor that is widely used in a range of power electronics circuits, such as power supply, power control and protection circuits, as well as switching applications. Its advantage lies in the fact that it is quite low on resistance, making it an ideal device for high-speed and high-frequency switching applications. As with other field-effect transistors, IRF3711ZTRRPBF operates with the Gate operating as the \'switch\'. The gate connects the drains (output terminals) to the sources (input terminals) when activated, and the current flows through the channel.
With regards to its application field, IRF3711ZTRRPBF has many applications in the power electronics field. It can be used in a number of power supply, power control and protection circuits, as well as switching applications, such as in DC-to-AC inverters, DC-to-DC converters, motor control, H-bridge and switching power supplies. It is also able to handle larger current and power than the standard MOSFET, making it a good choice for most high current and power applications.
In addition to its wide range of application fields, IRF3711ZTRRPBF has a number of advantages. It has a low on-resistance, so it is an ideal device for high-power, high-speed and high-frequency switching applications. It has a fast reverse recovery time and a low gate threshold voltage, so it can be used for high-speed logic and memory applications. In addition, it has a wide operating temperature range, making it suitable for a variety of operating environments.
Now let’s take look at the working principle of IRF3711ZTRRPBF. By definition, a field effect transistor is a “three-terminal semiconductor device in which the current passing between the source and the drain is controlled by a potential applied to the gate”. When an electric field is applied to the gate of an IRF3711ZTRRPBF, it will in turn control the number of electronics carriers passing through the channel. Increasing the electric field will further increase the channel current, allowing more current to flow through the transistor.
When the drain and source terminals of an IRF3711ZTRRPBF are connected to a power source, a channel of conducting electrons forms between the source and drain terminals. When a voltage is applied to the gate terminal, the electric field created influences the conducting electrons. This influences the gate current, which in turn controls the gate-to-source cutoff voltage.
In addition, the forward transconductance of an IRF3711ZTRRPBF is mainly determined by its gate voltage. In addition, the transistor has its own internal capacitance, which affects the gate current. This signifies that the transistor can be used as a voltage-controlled current-regulator device, since increasing the voltage applied to the gate will result in a decrease of the current passing through the transistor.
Therefore, in conclusion, IRF3711ZTRRPBF is a wide-ranging and versatile field effect transistor with many advantages when it comes to power supply, power control and protection circuits, as well as in the various control and switching applications. It has a low on-resistance and takes advantage of the electric field effect to regulate the current flow, making IRF3711ZTRRPBF an ideal device for high-performance applications.
The specific data is subject to PDF, and the above content is for reference
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