Allicdata Part #: | IRFR13N20DTRRP-ND |
Manufacturer Part#: |
IRFR13N20DTRRP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 200V 13A DPAK |
More Detail: | N-Channel 200V 13A (Tc) 110W (Tc) Surface Mount D-... |
DataSheet: | IRFR13N20DTRRP Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200V |
Current - Continuous Drain (Id) @ 25°C: | 13A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 235 mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 830pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 110W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IRFR13N20DTRRP is a type of Field Effect Transistor (FET). It is a part of MOSFET family and is a single type device, using metal oxide field effect technology in order to operate. It is commonly used in many electronic circuits for many purposes. IRFR13N20DTRRP can handle up to 20A of current, and operate with voltages up to 400V. Moreover, it offers great amount of drain-source voltage withstand of Repetitive Avalanche. It is offered in the most common TO-220AB form, with a single gate and a Body Diode; it also has a pinch-off voltage of -4.8 V.
The application field for IRFR13N20DTRRP is very wide, making this MOSFET type a great choice for all sorts of projects. First and foremost, in power switching configurations. It can serve as power device and as a switch due its very low on-state resistance and its ability to turn on and off quickly. Also it works great in power converters, inverters and motor drivers. Where a high current is need but with a low voltage drop and quick switching times is needed IRFR13N20DTRRP is always a great choice. Moreover, this MOSFET is used in the adjustable power sources configuration in order to control the current by manipulating the voltage.
The principle of operation for IRFR13N20DTRRP is based on the MOSFET transistors. Therefore, it consists of a gate. A source and a drain terminal. The voltage applied to the gate will control the current going through the device as it has a very low on-state resistance when the gate-source voltage (Vgs) is higher than the threshold voltage (Vth). When the voltage threshold is low, the current goes through and when there is no voltage applied to the gate, the current will be decreased or cut off. This property of MOSFET is taken advantage of in order to achieve the desired effect in a circuit configuration.
The IRFR13N20DTRRP also has a body diode located between the drain and the source which is used in order to conduct current in the reverse direction when the body voltage (Vsd) is above the pinch-off voltage. This allows for the device to handle both directions of the currents and handle higher voltages in applications that don\'t require a low on-state resistance.
In conclusion, IRFR13N20DTRRP is an excellent choice for a wide variety of applications due its capabilities and performance. It can handle up to 20A of current and voltage up to 400V, and has a very low on-state resistance, which makes it a great choice for power converters, inverters, and motor drivers. Moreover, its body diode allows for it to handle voltages above its pinch-off voltage, allowing for efficient use of the device in a wide variety of circuits.
The specific data is subject to PDF, and the above content is for reference
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