IRFR3704ZTRLPBF

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IRFR3704ZTRLPBF is an n-channel enhancement mode MOSFET (metal-oxide semiconductor field-effect transistor) that is used in various applications. It is manufactured by International Rectifier, an American company. The IRFR3704ZTRLPBF is offered in a TO-220AB (Through hole) package, and it is comprised of drain and source connections for a single transistor.

The IRFR3704ZTRLPBF has a maximum drain current rating of 3.2 amps and operates from -55°C to 150°C. It has a maximum drain-source voltage of 100V, and a drain-source voltage (VDS) of 80V. The maximum gate-source voltage is ±20V, with a gate-source leakage current of 20µA. The MOSFET has a total gate charge of 560nC, an input capacitance of 300pF, and a RDS (on) resistance of 0.010Ω. It is rated for 10W of dissipated power.

The IRFR3704ZTRLPBF is ideal for use in power management, switching, and motor control applications. It can be used as a switch in various circuits, as it has low on-resistance and a low gate charge, making it suitable for high-frequency operation. The MOSFET can also be used for voltage level shifting and power switching applications. It is widely used in automotive, industrial and consumer applications.

The IRFR3704ZTRLPBF belongs to International Rectifier\'s family of high-performance power MOSFETs, which are designed to deliver higher performance and longer life in a variety of applications. The MOSFET has excellent efficiency, higher current handling capabilities, and low on-resistance. This allows the MOSFET to handle more power efficiently and with lower heat losses, which increases the reliability and performance of the circuit.

The main working principle of MOSFETs is based on the electrostatic field controlling of conduction. When a voltage is applied at the gate terminal, a gate-source voltage (Vgs) is created that creates an electric field between the gate and the source. This field attracts electrons to the gate, creating a gate-to-channel charge that creates a depletion region at the junction between the gate and the channel. This depletion region helps to block current flow when an off voltage is applied at the gate terminal. When a forward bias is applied, the gate will attract a greater number of electrons and will allow current to flow from source to drain of the transistor.

The IRFR3704ZTRLPBF uses the typical MOSFET working principle, but also includes unique features such as a special gate design, a 3D channel structure, and high-temperature operation. This ensures that the MOSFET will remain in the high-efficiency range even at lower gate voltages. The low on-resistance of the IRFR3704ZTRLPBF ensures low power losses, which allows the device to deliver a higher efficiency rating even at higher temperatures.

The IRFR3704ZTRLPBF can be used in a wide variety of applications due to its high performance, low power losses and long life. It is often used in automotive, industrial, and consumer applications, and it can handle higher power levels while still maintaining excellent efficiency. This high performance MOSFET offers users a reliable device that can be integrated into various circuits with ease.

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