IRFR3707TRLPBF

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IRFR3707TRLPBF is a N-channel enhancement-mode Power MOSFET developed by International Rectifier Corporation. It is part of the HEXFET power MOSFET family. This type of device is well suited for low voltage switching operations. It is characterized by very low on-state resistance and very low input/output capacitance.

The IRFR3707TRLPBF is a product that has been developed to meet the rigorous needs of the industrial, commercial and consumer applications. Its maximum current rating is 75 A, with a breakdown voltage of 100 V. Its drain-to-source on-state resistance is very low at 0.015 Ohms and its gate threshold voltage is typically -1.9 V. It is ideal for switching and other applications that require high current at small voltages.

The IRFR3707TRLPBF is a single-channel MOSFET, which means that it can be used in applications that rely on voltage as a means of varying the current flow. It is commonly used in applications such as motor control and in switched-mode power supplies. It is also used in power management, audio amplifiers and peak power controllers.

The working principle of IRFR3707TRLPBF is based on the electrostatic attraction between the gate and the source of the FET. When a voltage is applied to the gate, it attracts the carriers in the source region, normally electrons, and as a result, a conductive path is formed from the source, through the channel and all the way to the drain. This, in turn, allows the current to flow from the source to the drain.

The IRFR3707TRLPBF is an efficient device that has a broad range of applications, including power management, switching, audio amplifiers and peak power controllers. Its low on-state resistance and gate threshold voltage make it ideal for low voltage switching operations. Its maximum current rating is 75 A with a breakdown voltage of 100 V, making it suitable for switching and other applications that require high current at small voltages.

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