IRFR13N20DCTRRP

IRFR13N20DCTRRP is a field-effect transistor (FET) from International Recifier Corporation that is specifically designed for the applications of power switching and DC-DC conversion. It is a single D-mode MOSFET, which means that it has an insulated gate that stores the voltage. The voltage applied to the gate determines the output from the channel. The MOSFET is based on advanced proprietary Vertical DMOS(VDMOS) technology and offers exceptional levels of efficiency in power conversion applications. Due to it’s low thermal resistance and wide operating temperature range, IRFR13N20DCTRRP is suitable for a variety of designs.

Working Principle: Essentially, the IRFR13N20DCTRRP works by controlling the amount of current that can flow through the transistor by means of a voltage applied to the insulated gate. The current flows through the source and drain terminals of the MOSFET, while the voltage across them determines the output current level. When the applied voltage increases, the current produced through the transistor also increases accordingly and vice versa.

The primary benefit of IRFR13N20DCTRRP over conventional FETs is its low power loss due to its vertical DMOS technology. This technology keeps the switch at full saturation during on state and at off state via the negative gate-source voltage. In addition, the MOSFET features very low gate charge, which reduces the power consumption for the same total gate charge.

The MOSFET also features a specific on-resistance of 13 milliohms, which provides an advantage in power conversion systems over conventional FETs. This high level of on-resistance translates into high efficiency in power conversion applications. Additionally, the MOSFET also has a thermal resistance of 2 degrees C/W, ensuring that it can sustain greater power dissipation.

The IRFR13N20DCTRRP is an excellent choice for power conversion systems due its excellent combination of low power loss, low gate charge, and high on-resistance. The device’s uniquely designed vertical DMOS technology reduces the power consumption, enabling higher efficiency for the same total gate charge. Additionally, the device’s low thermal resistance ensures that it can sustain greater power dissipation.