IRFS7434TRLPBF Discrete Semiconductor Products

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The IRFS7434TRLPBF is an integrated gate-controlled field effect power transistor, specifically a type of MOSFET. It is used for high-current, low-voltage switching applications and is intended for general purpose use. This article examines the application fields and working principles of the IRFS7434TRLPBF MOSFET.

Overview

The IRFS7434TRLPBF is a N-channel Enhancement Mode MOSFET with a maximum Drain-Source on-state resistance of 22 mΩ and a maximum Drain-Source breakdown voltage of 55 V. Its operating temperature range is -55C to 175C and its Gate-Source voltage is rated at -20V (+/ -5V). The Gate-Drain capacitance is rated at 8pF. The package is a RoHS compliant TO-220AC.

Application Field

The IRFS7434TRLPBF is suited for use in applications such as motor control, DC/DC converters, power switching, and load switching. This device is particularly useful in high voltage, high current applications, due to its low on-state resistance, low gate capacitance, and high breakdown voltage. Because this device is an Enhancement Mode type, it is especially suitable for load switching applications where it is important to minimize power consumption.

Working Principle

The IRFS7434TRLPBF is a typical MOSFET, which is comprised of an insulated gate, a source terminal, a drain terminal and a body terminal. The gate is insulated from the source, making the source-gate voltage (VGS) an important parameter. The body terminal is connected to the source, so the gate-body voltage (VGB) is typically zero.

When the gate-source voltage is at a negative level, the device is said to be in the "OFF" state. This is because the body terminal is connected to the negative voltage, which in turn causes electrons to become trapped in the gate. As a result, current is blocked from flowing between the source and drain terminals.

When the gate-source voltage is at a positive level, the device is said to be in the "ON" state. This is because the body terminal is connected to the positive voltage, which in turn causes the trapped electrons to be released. As a result, current is allowed to flow between the source and drain terminals.

The IRFS7434TRLPBF MOSFET has an integrated gate protection circuit that prevents damage to the gate in the event of a short circuit. This protection circuit provides additional safety in applications where the device could be exposed to excessive current.

Conclusion

The IRFS7434TRLPBF is a N-channel Enhancement Mode MOSFET, which is most suited for high-current, low-voltage switching applications. Its low on-state resistance and high breakdown voltage make it ideal for applications such as motor control, DC/DC converters, power switching, and load switching. Its integrated gate protection circuit provides additional safety in applications where the device could be exposed to excessive current.

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