Allicdata Part #: | IRFSL4410PBF-ND |
Manufacturer Part#: |
IRFSL4410PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 88A TO-262 |
More Detail: | N-Channel 100V 88A (Tc) 200W (Tc) Through Hole TO-... |
DataSheet: | IRFSL4410PBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 88A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 58A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs: | 180nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 5150pF @ 50V |
FET Feature: | -- |
Power Dissipation (Max): | 200W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-262 |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
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IRFSL4410PBF is a single P-channel MOSFET (PMOS) transistor. It has a very low on-resistance, making it suitable for use in a variety of applications. It can be used for power switching, load switching, and for current-limiting protection. Its main advantages are its small size, high-efficiency, and low power consumption.
The IRFSL4410PBF has a drain-source breakdown voltage of 20V and a peak drain current rating of 9A. It is a surface-mount device with four pins in a TO-263AB package. The part is designed to optimize the dopant profile in the channels to receive the maximum performance. It has a maximum junction-to-case thermal resistance of 2.7°C/W.
The IRFSL4410PBF is primarily used in power management applications, such as battery-powered devices and DC-DC converters. It can also be used in automotive and industrial applications, as well as applications which require low-side switching. This device is particularly suitable for switching loads which are sensitive to noise and high current surges.
The IRFSL4410PBF works by creating a voltage potential between the source and drain. The voltage potential is created by turning a transistor on and off, and allows the current to flow from the source to the drain. When the transistor is turned on, the current flows from the drain to the source. When the transistor is turned off, no current can flow.
The gate voltage is the main control terminal for controlling the IRFSL4410PBF. When the gate voltage is at or below the threshold voltage (VGSth) level, the MOSFET is off. Increasing the gate voltage above the threshold turns the MOSFET on, allowing current to flow from the drain to the source. When the gate voltage is increased to the maximum value (VGSmax) the MOSFET is turned to its maximum on-state.
The IRFSL4410PBF has a slow turn-off time, which requires careful timing of the input signals to ensure that the MOSFET turns off before the drain voltage reaches its maximum allowable level. For applications that require faster turn-off times, the IRFSL4410PBF can be used with a varistor or snubber to reduce the fall time. This can help protect the device from voltage spikes and reduce the turn-off time.
In conclusion, the IRFSL4410PBF is a single P-channel MOSFET transistor used for power switching, load switching, and current-limiting protection. It is primarily used in power management applications and benefits from its small size, high-efficiency, and low power consumption. The main control terminal for controlling the transistor is the gate voltage. Careful timing of the input signals is required to ensure that the transistor turns off before the drain voltage reaches its maximum allowable level.
The specific data is subject to PDF, and the above content is for reference
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