IRFS3107-7PPBF

Series:	HEXFET®
Packaging:	Tube
Part Status:	Discontinued at Digi-Key
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	75V
Current - Continuous Drain (Id) @ 25°C:	240A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	2.6 mOhm @ 160A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	240nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	9200pF @ 50V
FET Feature:	--
Power Dissipation (Max):	370W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D2PAK (7-Lead)
Package / Case:	TO-263-7, D²Pak (6 Leads + Tab), TO-263CB

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IRFS3107-7PPBF Application Field and Working Principle The IRFS3107-7PPBF is a metal oxide field effect transistor (MOSFET) designed to be used in portable and automotive applications. It is a surface-mount N-channel power MOSFET with a 4.2V gate threshold voltage and a 7.5A continuous drain current rating. The IRFS3107-7PPBF is suitable for applications such as mobile phone amplifiers and switching power converters.A MOSFET is a type of field-effect transistor (FET) that combines a metal oxide with a semiconductor material to form a thin gate oxide layer. The thin oxide layer enables the transistor to switch rapidly between two states and is designed to have an extremely low capacitance, making it ideal for high speed operations.MOSFETs can be used as switches in digital and analog circuits, and can also be used in amplifiers and voltage regulators. They are commonly used in integrated circuits for applications such as motor control, data acquisition, and power management.The IRFS3107-7PPBF has an optimized structure and drive characteristic to provide superior low-voltage performance, high current handling capability, and excellent switching characteristics. The device features 30A maximum drain current, 24A peak drain current, and 7.5A continuous drain current. It also features a 4.2V gate threshold voltage, a 0.1ohm on-resistance (RDS(on)), and a drain-source breakdown voltage of 60V.The IRFS3107-7PPBF is designed to provide superior performance in the 7A-30A range, making it ideal for applications such as mobile phone amplifiers, switching power converters, and motor control systems. It is a Self-Insulated MOSFET, meaning it does not require a separate insulating body, allowing for a low-cost, compact design.The working principle of the IRFS3107-7PPBF is based on the phenomenon of current flow in a semiconductor. A semiconductor material, such as silicon, has a number of electrons that move freely through the material. The doping of impurities in the silicon creates a junction between negative and positive charge carriers.When a voltage is applied to the gate of the IRFS3107-7PPBF, it creates an electric field in the substrate and causes electrons to flow from the source to the drain. This creates a current that is controlled by the gate voltage, allowing the MOSFET to act as a switch or amplifier.The IRFS3107-7PPBF can also be used to provide current regulation. By controlling the gate voltage, the drain current can be adjusted to maintain a preset level. This is useful for applications such as LED driving, where precise amounts of current are required.In conclusion, the IRFS3107-7PPBF is a versatile MOSFET designed to provide superior performance in portable and automotive applications. It is designed to provide superior low-voltage performance and high current handling capability, making it ideal for applications such as mobile phone amplifiers, switching power converters, and motor control systems. The working principle of the IRFS3107-7PPBF is based on the phenomenon of current flow in a semiconductor, which is controlled by the gate voltage.

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