IRFS7434-7PPBF Allicdata Electronics
Allicdata Part #:

IRFS7434-7PPBF-ND

Manufacturer Part#:

IRFS7434-7PPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 240A D2PAK-7
More Detail: N-Channel 40V 240A (Tc) 245W (Tc) Surface Mount D2...
DataSheet: IRFS7434-7PPBF datasheetIRFS7434-7PPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: HEXFET®, StrongIRFET™
Packaging: Tube 
Part Status: Discontinued at Digi-Key
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 1 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 315nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 10250pF @ 25V
FET Feature: --
Power Dissipation (Max): 245W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK (7-Lead)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Description

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IRFS7434-7PPBF is a FET (Field effect transistor) that is mostly used in many applications as a switch, especially in the electrical and electronic industry. Equipped with a three-terminal arrangement (Gate, Drain, and Source), the FET is a common component used in many electronic circuits.

Generally, the FET consists of an insulated gate with a semiconductor gate oxide, together with a drain and a source region. Both the drain and the source contact have a semiconductor material, which allows current flow between them when the voltage is applied to the gate. This current flow is controlled by the voltage applied to the gate.

Due to its many features, the IRFS7434-7PPBF is a very popular component in many applications, especially in the mobile industry. It is used in mobile devices such as tablets and smartphones. It is used to control power-saving features, and also is used in low-power circuits. The FET can also be used in audio circuits, and even in communication fields.

The main property of the IRFS7434-7PPBF is its low threshold voltage, which is typically around 0.4V. This ensures lower power consumption and helps it to be used in low-power applications.

The FET works in an independent manner, meaning that it is not connected to any other circuit and it operates as an independent unit. This device is rated for a drain current of up to 7A, and can handle up to 100V of drain-source voltage. The FET is capable of withstanding high temperatures, up to 175 degrees Celsius. Additionally, the FET has a low ON resistance and a low gate to source capacitance.

Due to these features, the IRFS7434-7PPBF can be used in a variety of applications, such as switching, voltage regulation, and power management. It is also used in automotive applications, and in applications where energy efficiency is a factor.

In terms of its working principle, the FET operates by allowing current flow between the drain and the source when a voltage is applied to the gate. This voltage acts as an on/off switch, which allows the FET to control the flow of current between the drain and the source. This way, the FET is able to regulate power and voltage.

In conclusion, the IRFS7434-7PPBF is a FET which is used in many applications. It is equipped with three terminals: Gate, Drain, and Source. It is a popular component in many applications as it is rated for a drain current of up to 7A, and can handle up to 100V of drain-source voltage. Furthermore, it has low ON resistance and low gate to source capacitance, and it is even capable of withstanding high temperatures. The FET works by allowing current flow between the drain and the source when a voltage is applied to the gate, and this way the FET is able to regulate power and voltage.

The specific data is subject to PDF, and the above content is for reference

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