IRFSL5620PBF

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The Infineon IRFSL5620PBF is a type of surface mount single N-Channel enhancement mode Field Effect Transistor (FET). It is a fast switching device that operates under very low gate-source voltages, making it ideal for high-speed digital and analog applications. The transistors are composed of an insulated-gate field effect structure which provides high-speed switching capability, low on-resistance, and low gate charge.

The IRFSL5620PBF has an output of 800 millivolts when driven by a low gate-source voltage (VGS). It operates at a maximum drain current of 5.6 amperes, a maximum drain-source voltage of 30 volts, and a maximum power dissipation of 81 watts. The IRFSL5620PBF is also optimized for lowest capacitances and has a back-to-back diode protection during switching. This device is designed to be able to operate in a wide temperature range from -55°C to 175°C.

The working principle of IRFSL5620PBF is based on the physics of the transistor. A transistor is a three-terminal semiconductor device that amplifies or switches the flow of electrical current. Transistors can be divided into two types, bipolar and field-effect transistors (FET). FETs have an insulated gate which is used to control the current flow. When a voltage is applied to the gate of the FET, a field is created which affects the width of the channel between the drain and source. When the drain-source voltage is reaching a threshold value, the FET is turned ON, allowing current to flow from the drain to the source. The current conduction through the transistor is controlled by the voltage at the gate.

Application Fileds of IRFSL5620PBF includes: power management applications, switching power supplies, AC/DC converters, synchronous buck regulators, DC/DC converters, high-side switches, load switches, low RPM motor controllers, and etc. The IRFSL5620PBF is suitable for any application where fast, efficient power management is required.

The IRFSL5620PBF is a robust, high-performance N-channel enhancement mode FET ideal for use in a wide variety of power management applications. It features low gate charge and an ultra-low on-resistance, making it ideal for high-speed digital and analog applications. With its wide –55° C to 175° C temperature range, the IRFSL5620PBF provides reliable, long-lasting performance in the most adverse conditions.

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