IRFS7540PBF Allicdata Electronics
Allicdata Part #:

IRFS7540PBF-ND

Manufacturer Part#:

IRFS7540PBF

Price: $ 1.78
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N CH 60V 110A D2PAK
More Detail: N-Channel 60V 110A (Tc) 160W (Tc) Surface Mount D2...
DataSheet: IRFS7540PBF datasheetIRFS7540PBF Datasheet/PDF
Quantity: 16
1 +: $ 1.61280
10 +: $ 1.45908
100 +: $ 1.17256
500 +: $ 0.91199
1000 +: $ 0.75564
Stock 16Can Ship Immediately
$ 1.78
Specifications
Series: HEXFET®, StrongIRFET™
Packaging: Tube 
Part Status: Discontinued at Digi-Key
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 65A, 10V
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4555pF @ 25V
FET Feature: --
Power Dissipation (Max): 160W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Description

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The IRFS7540PBF is a power Field-Effect Transistor (FET) produced by International Rectifier. It is a logic level N-channel type power MOSFET and is a power MOSFET featuring high speed switching and very low on-state resistance. It is mainly used as a switching element in power electronic circuits such as automotive, professional lighting and home appliance among others.

The IRFS7540PBF is designed to deliver an extremely low on-resistance in the conducting state and high frequency switching performance. Its low gate threshold voltage allows it to be used in logic level applications. This MOSFET is supplied in a so-called "PowerPAK" SC-75 package. It has an integrated drain-source clamp to provide enhanced ruggedness and efficient performance.

The IRFS7540PBF is composed of an N-channel insulated-gate structure. The gate can be driven by a low current signal, which controls the switch from the off-state to the on-state. When the gate voltage is higher than the threshold voltage, the switch is activated, allowing current in the drain-source path to flow. An integral protection diode is also present in the structure, providing reverse polarity protection from the drain to the source. The strain relief voltage is between 460V and 600V.

This MOSFET exhibits an on-resistance of about 2mΩ and a breakdown voltage of about 75V. It has an average on-state current rating of 120A and can handle a maximum current of 40A in the dynamic state. Its default gate-source threshold voltage is 4V, but this can be adjusted between 1V and 5V. The maximum allowed temperature range is -30 to +150°C.

Because of its characteristics, the IRFS7540PBF is mainly used in automotive and industrial applications and is particularly well-suited for high-power and high-frequency applications. Examples include automotive mirror and sunroof controllers, HVAC controllers, DC-DC converters, motor drives and electric power steering.

This MOSFET is also used in the professional lighting industry, in devices such as LED drivers and power factor controllers. It is an ideal choice for home appliance applications, such as in induction cookers, washing machines and dishwashers.

Overall, the IRFS7540PBF is a powerful and reliable FET for applications that require high power switching and low on-state resistance. It is a straightforward solution that is easy to integrate into designs, allowing engineers to develop high performance products in a cost-effective way.

Although the IRFS7540PBF offers considerable advantages, it is important to note that its performance and reliability can be affected by environmental conditions, which can lead to excessive power dissipation and over-temperature conditions. To ensure optimal performance, it is highly recommended that the MOSFET be adequately cooled and protected against reverse polarity.

The specific data is subject to PDF, and the above content is for reference

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