IRFS5615TRLPBF Discrete Semiconductor Products |
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Allicdata Part #: | IRFS5615TRLPBFTR-ND |
Manufacturer Part#: |
IRFS5615TRLPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 150V 33A D2PAK |
More Detail: | N-Channel 150V 33A (Tc) 144W (Tc) Surface Mount D2... |
DataSheet: | IRFS5615TRLPBF Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 150V |
Current - Continuous Drain (Id) @ 25°C: | 33A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 42 mOhm @ 21A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1750pF @ 50V |
FET Feature: | -- |
Power Dissipation (Max): | 144W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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The IRFS5615TRLPBF transistor is a high-performance n-channel MOSFET that promises to provide outstanding performance for a variety of electronic applications. It is a low power, low-voltage transistor with extremely low input capacitance and fast switching speed. This makes it a great choice for a wide range of applications that require quick turn-on and satisfactory signal performance.
In terms of its application field, the IRFS5615TRLPBF transistor is primarily used in low signal applications, such as the control of current flow in switching circuits. It is mainly used in industrial applications, such as power supplies, motor control, lighting, vehicle systems, home appliances, and factory automation systems. These applications often require a combination of low power consumption, low RDS(ON)loss, and fast switching speeds. The IRFS5615TRLPBF transistor is also used in audio amplifiers, as its very low input capacitance results in higher power efficiency and lower operating temperatures.
The IRFS5615TRLPBF transistor incorporates a vertical P-channel design, which has a number of advantages over traditional horizontal MOSFETs. Firstly, a vertical P-channel design has a much smaller semiconductor die size, which means it is capable of providing higher current ratings in a much smaller package. Secondly, the vertical design enables the IRFS5615TRLPBF transistor to have a much higher input capacitance due to its increased gate-source capacitance. This results in higher frequency response, lower power consumption, and higher switching speeds.
In terms of its working principle, the IRFS5615TRLPBF transistor operates using the principle of a PN-junction semiconductor. When a voltage is applied across its two terminals, the Gate, the Drain-Source, and the Source, a depletion region is created in the semiconductor, allowing current to flow through it. When the voltage is increased, the current increases, allowing the transistor to amplify the current in proportion to the voltage applied. The benefit of this is that it allows for very fast switching of the current, meaning the transistor is capable of quickly and accurately responding to signals. The low drain-source on-resistance also means that it is highly efficient in terms of power consumption.
The IRFS5615TRLPBF transistor is a highly versatile, low power, and low-voltage transistor that is suitable for a wide range of applications. Its low input capacitance and fast switching speed make it an ideal choice for low-level signal applications, while its vertical design results in higher current ratings and faster switching speeds. This makes it a great choice for audio amplifiers, industrial applications, and vehicle systems. Finally, its working principle wherein it amplifies current in proportion to the applied voltage makes it an extremely efficient and reliable transistor for a variety of electronic circuit applications.
The specific data is subject to PDF, and the above content is for reference
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