2N7000BU

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 2N7000BU is an N-Channel, depletion-mode, MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed for use in low-power, analog and digital circuits. The device is a single, three-terminal, low voltage, low current switch with an on resistance of typically 0.25-ohms and is capable of passing currents up to 500mA. The MOSFET can be used to switch both AC and DC signals, and it can be used as a voltage-controlled current source. It is commonly used in digital logic operations.

The 2N7000BU is most commonly used in applications such as motor control and switching, low power amplifiers, voltage regulator circuits, low power switch circuits, power amplifier switching, and audio amplifier protection circuits. It can also be used in digital or analog circuits that require a low power switch, such as power supplies, switching power supplies, and digital logic circuits. The MOSFET is well suited for use in portable or battery operated applications due to its low power consumption and high switching speed.

The 2N7000BU relies on the basic principle of the MOSFET, which is a voltage-controlled, voltage-operated device. It has three terminals: the gate, the source, and the drain. The gate controls the flow of current between the source and the drain, much like a valve controls the flow of a liquid. The voltage applied to the gate determines the amount of current that flows between the source and the drain. A positive voltage applied to the gate will cause current to flow, while a negative voltage applied to the gate will prevent current from flowing. The current flow is further controlled by the gate-source voltage, or the voltage difference between the gate and the source. It is this voltage difference that will determine the resistance between the gate and the drain, which is called the on resistance.

The 2N7000BU has a drain-source current rating of 500mA, which is suitable for most applications that require low power switching. It also has a gate-source voltage rating of 20V, which is enough to switch on-currents up to a few tens of mA. Additionally, it has a maximum drain-source breakdown voltage of 60V and a maximum operating temperature of 175°C. These specs make it an ideal choice for use in various low power analog and digital circuits. Additionally, it has a very low on-resistance of 0.25 ohms, which makes it an efficient switch.

In summary, the 2N7000BU is a three-terminal, low voltage, low current switch with an on resistance of typically 0.25-ohms. It is well suited for use in applications such as motor control and switching, low power amplifiers, voltage regulator circuits, low power switch circuits, power amplifier switching, and audio amplifier protection circuits. It can also be used in digital or analog circuits that require a low power switch, such as power supplies, switching power supplies, and digital logic circuits. Additionally, the MOSFET has a drain-source current rating of 500mA, a gate-source voltage rating of 20V, a maximum drain-source breakdown voltage of 60V, and a maximum operating temperature of 175°C, making it an ideal choice for use in low power applications.

The specific data is subject to PDF, and the above content is for reference