2N7002_NB9G002 Allicdata Electronics
Allicdata Part #:

2N7002_NB9G002-ND

Manufacturer Part#:

2N7002_NB9G002

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 115MA SOT-23
More Detail: N-Channel 60V 115mA (Ta) 200mW (Ta) Surface Mount ...
DataSheet: 2N7002_NB9G002 datasheet2N7002_NB9G002 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Base Part Number: 2N7002
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23 (TO-236AB)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 200mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Vgs (Max): ±20V
Series: --
Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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FET stands for field effect transistor, and it is an integrated circuit that acts as a powerful switch with high current and voltage capability. The 2N7002_NB9G002 is a N-channel MOSFET (short for metal-oxide-semiconductor field-effect transistor) which is a low-level enhancement mode transistor capable of switching up to 40V and 1.5A. It offers the advantage of lower gate drive requirements than a standard MOSFET, allowing for efficient designs and easy drive.

The 2N7002_NB9G002 is a great choice for applications requiring displacement-sensing, current regulation, and load control. It can also be used as an inverter and buffer in switching voltage regulators, for switching in analog-to-digital converters, and for voltage compliance in memory circuits. Additionally, it is capable of providing high levels of current that can be used for low-frequency digital signal switching.

The working principle of the 2N7002_NB9G002 is similar to that of any other type of FET and is based on the principle of electrostatic control. It relies on the electric field set up between source and drain. The gate controls the flow of current between the source and drain pins. When a voltage is applied to the gate, it opens up a channel in the semiconductor material, allowing electrons and holes to move freely between the source and drain terminals.

Another advantage of the 2N7002_NB9G002 is its low gate-driven and gate-level-dependent leakage current. This allows for energy-efficient and low-noise operation, making it ideal for high-frequency applications. The device also utilizes high-stability bipolar junction transistors to help stabilize the device’s on-state resistance and minimize power loss during the switching process.

The 2N7002_NB9G002 is also capable of withstanding high temperatures, making it suitable for high power applications. It has a high thermal resistance and can be used in a variety of environments. Its package offers a compact design, making it ideal for high-density board designs. Additionally, the device is RoHS compliant, offering further environmental protection.

In summary, the 2N7002_NB9G002 is a powerful and reliable addition to any application requiring precision current and voltage regulation. Its low gate-voltage requirements, high operating temperature, and RoHS compliance make it a great choice for a wide variety of applications. Plus, its small size and high current-handling capabilities enable easy and efficient designs.

The specific data is subject to PDF, and the above content is for reference

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