2N7002BKMB,315

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The 2N7002BKMB,315 is a type of field effect transistor (FET) that is deemed to be a single, n-channel MOSFET. This series of FETS is manufactured by various semiconductor companies including Fairchild Semiconductor, On Semiconductor, STMicroelectronics, and Texas Instruments. This series of FETs is designed to do a variety of different tasks and come in a variety of packages.

A field-effect transistor (FET) is a type of transistor that uses electric fields to control current. It is also referred to as a unipolar transistor and is one of three main types of transistors that are commonly used in a variety of applications. FETs can be used in both analog and digital circuits and in some cases can even be used as highly efficient switches.

The 2N7002BKMB,315 is a single, n-channel FET and has several specific characteristics. It is capable of operating between 1 to 6 volts, has a drain current of 120mA, a total gate charge of 1.1nC, and a breakdown voltage between 20 to 30V. It is also designed to be durable and withstand temperatures up to 200 degrees Celsius.

The 2N7002BKMB,315 FET is used in a variety of applications, and is most commonly used as a switch, an amplifier, and a linear regulator. In reality, the list of applications is almost endless, as this type of FET is widely used in many modern electronics.

When it comes to the working principle of the 2N7002BKMB,315 FET, it is actually quite simple. The FET has two separate parts: the gate and the source. The gate is responsible for controlling the flow of electric current, while the source is the main source of electric current. When the proper voltage is applied to the gate of the FET, it acts as a switch and allows for the flow of electric current from the source.

The 2N7002BKMB,315 is a single, n-channel FET that is widely used in a variety of applications. It is highly durable and operates between 1 to 6 volts. It has a drain current of 120mA, a total gate charge of 1.1nC, and a breakdown voltage between 20 and 30V. By applying the proper voltage to the gate of the FET, electric current can flow from the source, allowing for the FET to act as a switch.

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