2N7002E,215

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	TO-236AB (SOT23)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	830mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	50pF @ 10V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	0.69nC @ 10V
Series:	TrenchMOS™
Rds On (Max) @ Id, Vgs:	3 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	385mA (Ta)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction to 2N7002E,215

2N7002E,215 is a type of field effect transistor (FET) that is a popular choice in many applications because of its high voltages and extremely low power consumption. It is a type of single MOSFET (metal oxide semiconductor field effect transistor) that has its signal channel in the form of a single-gate reference source. This type of FET is often used in low-voltage and low-power circuits, and is commonly used in RF (radio frequency) applications.

Application Field of 2N7002E,215

A wide range of applications can benefit from the use of the 2N7002E,215 FET which includes many automotive, industrial, and consumer-level electronic applications. Its unique composition also makes it well-suited for measuring high-voltage, high-sensitivity, and low-power signals.2N7002E,215 devices can find uses in AC/DC motor controller, HVAC control systems, lighting control, temperature control, home automation, digital signaling, analog-to-digital converter, voltage-controlled oscillator, power switch, and data communications. It is also used to provide low-noise signals to communication circuits, and as a driver of a variety of high-speed, low-power logic gates. In addition, the 2N7002E,215 can also be used in power-deflection converters and power-inverter systems.

Working Principle of 2N7002E,215

The 2N7002E,215 has a single-gate terminal which is responsible for the operation of the device. The gate is the control terminal that conducts electric current between the source and drain terminals. When the gate voltage is increased, the source and drain terminals start conducting, thus allowing electrical current flow from the source to the drain.The amount of current conducted from the source to the drain is determined by the amount of voltage applied to the gate. If the voltage is small, the amount of current conducted is smaller. As the gate voltage increases, more current can be conducted from the source to the drain.The use of this type of FET makes it possible for electronics to be built with very high voltage levels, with very low power consumption. The low power consumption allows the devices to be very efficient, and it also makes it possible to reduce their overall size.

Conclusion

The 2N7002E,215 is a single-gate MOSFET with a high voltage level, a low power consumption, and a wide range of applications. It is commonly used in RF (radio frequency) applications, as well as other low-voltage, low-power electronics. It is an excellent choice for providing low-noise signals to communication circuits, as well as a driver of various high-speed, low-power logic gates.

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