2N7002P,215

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The 2N7002P,215 is a 40V N-channel enhancement-mode MOSFET developed by Diodes Incorporated. The device has a P-channel chip made from a silicon-based material, with an exceptionally high breakdown voltage that provides excellent reliability. This device is suitable for applications where switching power is needed, including low-current and medium-current applications.

The 2N7002P,215 MOSFET features a drain source resistance of 22mΩ (maximum value at 10V gate source voltage), a drain current rating of < 3A and an on-resistance of 0.85ohm (at Vgs = 10V). The low on-resistance makes it ideal for switching power supply circuits and power converters. It also has a high frequency response, making it suitable for high-speed switching applications.

The 2N7002P,215 MOSFET is designed with an ESD (electrostatic discharge) protection to protect against static electricity and other electromagnetic interference. Additionally, the device features a high frequency response and a low input capacitance of 41.84pF (at Vgs=10V), making it suitable for high-speed applications such as clock switches and logic circuits.

The 2N7002P,215 MOSFET is widely used in a variety of applications such as digital logic circuits, automotive control systems, switched-mode power supplies, industrial motor control and telecommunications. The device is also widely used in audio amplifiers and instrumentation circuits. Its high temperature rating of 175°C makes it suitable for industrial applications requiring high performance and reliability.

The working principle of the 2N7002P,215 MOSFET is based on the transistor-level electrical characteristics of a P-type semiconductor material. The P-type material has a higher electron mobility than an N-type material, resulting in a much lower power input for a given current. The MOSFET is essentially composed of two P-type layers, with a gap between them. The gate of the MOSFET is connected to the top P-type layer, while the drain and source are connected to the bottom P-type layer. When a voltage is applied to the gate, it induces a field that attracts electrons from the bottom layer into the gap between the two layers, creating an inversion layer in the gap.

The 2N7002P,215 MOSFET also features a high temperature limit of 175°C, making it suitable for industrial applications requiring high performance and reliability. Additionally, the device has an excellent thermal conductivity and a very low input capacitance, making it ideal for high-speed switching applications.

In summary, the 2N7002P,215 MOSFET is an ideal device for a variety of low-current to medium-current applications such as digital logic circuits, automotive control systems, switched-mode power supplies and telecommunications systems. The device offers excellent reliability and performance, making it suitable for applications that require high speed and durability. The device is also capable of operating in high-temperature industrial applications.

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