2N7002WST1G Allicdata Electronics
Allicdata Part #:

2N7002WST1G-ND

Manufacturer Part#:

2N7002WST1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 0.115A SC70
More Detail: MOSFET N-CH 60V 0.115A SC70
DataSheet: 2N7002WST1G datasheet2N7002WST1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: --
Technology: --
Current - Continuous Drain (Id) @ 25°C: --
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: --
Vgs (Max): ±20V
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-3 (SOT323)
Package / Case: SC-70, SOT-323
Description

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2N7002WST1G are a type of Single FET (Field Effect Transistor) also known as a MOSFET ( Metal Oxide Semiconductor Field Effect Transistor).MOSFETs are commonly used as power switches in a variety of applications including motor drivers, power converters, and motor controllers. Due to their ability to turn on and off rapidly, MOSFETs can be used in more precise applications than other types of switches.

The Application Field of the 2N7002WST1G

The 2N7002WST1G can be used in a variety of applications requiring rapid switching of large currents. They are suitable for high voltage applications as well as low voltage ones, as the maximum voltage ratings for 2N7002WST1G are specified up to 50V. Additionally, the 2N7002WST1G is suitable for any location where electromagnetic interference generated by a switching circuit has to be kept to a minimum, as these devices have good lightning protection.

Working principle of the 2N7002WST1G

The 2N7002WST1G is composed of three terminals; the drain, source and gate. The device operates on the principle of the transfer of electrons, rather than of holes. The gate is isolated from the source and drain, and contains no charge carriers. When a positive voltage is applied to the gate the electrons in the channel will be attracted to the positive gate, which reduces the resistance between source and drain. This creates an electric current which can be controlled by varying the positive voltage of the gate.The 2N7002WST1G is a type of enhancement MOSFET. This means that the device is normally off, and requires an input voltage to turn it on and allow current to flow. The combination of a low on-state resistance and an input capacitance makes the device ideal for switching applications.

Conclusion

The 2N7002WST1G is a type of single FET that has a wide range of applications. It has a low on-state resistance and a fast response time, making it ideal for use in high-speed switching, motor drivers, power converters, and motor controllers. The device uses the transfer of electrons, rather than of holes, to control the rate of current flow by varying the positive voltage of the gate.

The specific data is subject to PDF, and the above content is for reference

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