Allicdata Part #: | 2N7002WT3G-ND |
Manufacturer Part#: |
2N7002WT3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 0.31A SOT-323 |
More Detail: | N-Channel 60V 310mA (Ta) 280mW (Tj) Surface Mount ... |
DataSheet: | 2N7002WT3G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SC-70-3 (SOT323) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 280mW (Tj) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 24.5pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 0.7nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.6 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 310mA (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The 2N7002WT3G is a small, general-purpose Field Effect Transistor (FET), manufactured in the MOSFET (Metallic Oxide Semiconductor Field Effect Transistor) technology. It is a single transistor type device, which operates using the principle of voltage-controlled current flow.
The 2N7002WT3G is generally categorized as a "signal level" FET, meaning that it is intended for use in relatively low-power circuits. Additionally, it is considered to have "stable" junction potential, unlike some other FET types, which means that it can be used in a wide range of different voltage and current applications with minimal instability.
The 2N7002WT3G is most commonly used for audio applications such as signal amplification, signal switching, and signal control. It is also commonly used in relay control circuits, remote control circuits, and other similar applications. In addition, it is also often used to control the power supply of integrated circuits, due to its stable junction characteristics.
The 2N7002WT3G has several different properties that make it attractive for various types of FET-based applications. It has a low source-drain resistance, which allows it to provide better current control of the device. It also has high frequency response, which allows it to be used at high speeds. Additionally, it has a relatively low input capacitance, which means that it can be used in applications where high switching speeds are important.
The 2N7002WT3G is also well-suited for low-noise applications. This is due to its low saturation current. Additionally, it does not require a high gate-source voltage, meaning that it is relatively easy to drive and control. This makes it suitable for use in scenarios where noise needs to be kept at a minimum.
The overall device performance of the 2N7002WT3G is quite good when compared to other FETs of similar size and technology. It is a reliable, low-cost device, capable of providing excellent performance for a variety of different applications. Additionally, it is easy to obtain and use, making it attractive for many different types of projects. As a result, the 2N7002WT3G is an excellent choice for FET-based applications, both in high and low power circuits.
The specific data is subject to PDF, and the above content is for reference
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