Allicdata Part #: | 2SK2989T6F(J-ND |
Manufacturer Part#: |
2SK2989,T6F(J |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH |
More Detail: | Through Hole TO-92MOD |
DataSheet: | 2SK2989,T6F(J Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Packaging: | Bulk |
Part Status: | Obsolete |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-92MOD |
Package / Case: | TO-226-3, TO-92-3 Long Body |
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2SK2989 and T6F(J are a type of semiconductor field-effect transistor (FET) which are used for switching, amplification and voltage handling. FETs are a type of solid-state device which consists of several layers of semi-conducting material. The device is then electrically isolated from the rest of the circuit by an insulated gate. FETs are different from bipolar transistors in that the current flow through them is controlled not by a current but by a voltage applied to the gate. This makes FETs more suitable for use as switches and amplifiers in many applications.
The 2SK2989 and T6F(J are both single N-channel enhancement devices, meaning that their output current is increased when the gate voltage is raised, allowing current to flow between the source and the drain. This type of FET is useful when it is necessary to keep the voltage across the three pins at a minimum or zero, whilst still allowing a higher voltage to be input. The FETs are also able to restrict the current to prevent any overload on the circuit.
The 2SK2989 and T6F(J FETs can be used in applications such as power supplies, lighting, audio systems and signal processing. They can be employed as switches, to control the flow of current, as amplifiers, to control the level of voltage, or to protect the device from high voltage or current.
The 2SK2989 and T6F(J FETs have a number of advantages over other types of FETs. They are relatively low cost, and have relatively low gate capacitance, meaning that they can handle higher switching frequencies than most other transistors. They also have good thermal characteristics, making them ideal for use in higher temperature applications.
The 2SK2989 and T6F(J FETs operate on the same principle as other FETs, where current flows between two terminals, the source and the drain, when the gate is biased, either positively or negatively. The gate voltage needs to be at a certain level in order to allow the current to flow, and this is known as the threshold voltage. If the voltage is too low, no current will flow, and if it is too high, then the FET will be overloaded.
The advantages of using FETs over other types of transistors include their small size and low cost. This makes FETs popular for use in many different types of circuits. Additionally, the gate capacitance of FETs is much lower than that of other transistors, meaning that they can handle higher switching frequencies. Finally, FETs are relatively low power compared to other transistors.
In conclusion, 2SK2989 and T6F(J FETs are single N-channel enhancement devices which are useful for controlling the current or voltage in many applications. They are suitable for use in power supplies, lighting, audio systems and signal processing and offer a number of advantages over other types of transistors, including their low cost, small size and good thermal characteristics. Furthermore, the gate capacitance of FETs is much lower, meaning that they can handle higher switching frequencies than other transistors.
The specific data is subject to PDF, and the above content is for reference
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2SK2231(TE16R1,NQ) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 60V 5A PW-MOL... |
2SK2221-E | Renesas Elec... | 0.0 $ | 1000 | MOSFET N-CH 200V 8A TO-3P... |
2SK2315TYTR-E | Renesas Elec... | -- | 1000 | MOSFET N-CH 60V 2A 4-UPAK... |
2SK221100L | Panasonic El... | 0.0 $ | 1000 | MOSFET N-CH 30V 1A MINI-P... |
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2SK2299N | ROHM Semicon... | 0.0 $ | 1000 | MOSFET N-CH 450V 7A TO-22... |
2SK2713 | ROHM Semicon... | -- | 1000 | MOSFET N-CH 450V 5A TO-22... |
2SK2740 | ROHM Semicon... | 0.0 $ | 1000 | MOSFET N-CH 600V 7A TO-22... |
2SK2503TL | ROHM Semicon... | -- | 1000 | MOSFET N-CH 60V 5A DPAKN-... |
2SK2504TL | ROHM Semicon... | -- | 1000 | MOSFET N-CH 100V 5A DPAKN... |
2SK2715TL | ROHM Semicon... | -- | 1000 | MOSFET N-CH 500V 2A DPAKN... |
2SK2887TL | ROHM Semicon... | -- | 1000 | MOSFET N-CH 200V 3A DPAKN... |
2SK2719(F) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 900V 3A TO-3P... |
2SK2847(F) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 900V 8A TO-3P... |
2SK2916(F) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 500V 14A TO-3... |
2SK2917(F) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 500V 18A TO-3... |
2SK2967(F) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 250V 30A TO-3... |
2SK2993(TE24L,Q) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 250V 20A TO22... |
2SK2995(F) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 250V 30A TO-3... |
2SK2962(T6CANO,A,F | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CHThrough Hole T... |
2SK2962(T6CANO,F,M | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CHThrough Hole T... |
2SK2962(TE6,F,M) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CHThrough Hole T... |
2SK2962,F(J | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CHThrough Hole T... |
2SK2962,T6F(J | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CHThrough Hole T... |
2SK2962,T6F(M | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CHThrough Hole T... |
2SK2962,T6WNLF(J | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CHThrough Hole T... |
2SK2962,T6WNLF(M | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CHThrough Hole T... |
2SK2989(T6CANO,A,F | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CHThrough Hole T... |
2SK2989(T6CANO,F,M | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CHThrough Hole T... |
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