| Allicdata Part #: | 2SK3801-ND |
| Manufacturer Part#: |
2SK3801 |
| Price: | $ 1.37 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Sanken |
| Short Description: | MOSFET N-CH 40V TO-3P |
| More Detail: | N-Channel 40V 70A (Ta) 100W (Tc) Through Hole TO-3... |
| DataSheet: |  2SK3801 Datasheet/PDF |
| Quantity: | 1000 |
| 2000 +: | $ 1.23339 |
| Vgs(th) (Max) @ Id: | 4V @ 1mA |
| Package / Case: | TO-3P-3, SC-65-3 |
| Supplier Device Package: | TO-3P |
| Mounting Type: | Through Hole |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 100W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5100pF @ 10V |
| Vgs (Max): | ±20V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 6 mOhm @ 35A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 70A (Ta) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Bulk |
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The 2SK3801 is a NFET (N-channel, enhancement mode field effect transistor), manufactured using the latest MOSFET technology. It is widely used in power switched applications and offers high performance switching with low on-resistance. Its maximum drain-source voltage rating is minus 30 volts.
Applications of 2SK3801
The 2SK3801 is widely used for power switching applications in the following industries:
- Automotive Electronics
- Industrial Electronics
- Communications Electronics
- Medical Electronics
- Consumer Electronics
It is also used as a power transistor in switching power supplies, DC to DC converters, inverters, and other applications where a high current switching capability is needed.
Working Principle of 2SK3801
The 2SK3801 is a PMOSFET (p-channel, enhancement mode field effect transistor). It operates in an enhancement mode and allows current to flow through the device when a positive voltage is applied to the gate (control) electrode. When the positive voltage is removed, current stops flowing through the device.
The 2SK3801 is constructed from a silicon substrate with two N-type layers (source and drain) on top. An oxide layer is then grown on top of the substrate and on the N type layers. A metal gate (control electrode) is then deposited on top of the oxide layer. As the gate voltage is increased, the oxide layer gets thinner and current is allowed to flow from the source (N-type) to the drain (N-type).
Advantages of the 2SK3801
- High speed switching with low on-resistance
- High breakdown voltage
- High switching frequency
- Low input capacitance
- Excellent thermal stability
Disadvantages of the 2SK3801
- Not suitable for analog signals
- It is sensitive to temperature and voltage variations
The 2SK3801 is a highly reliable and versatile switching device. It can be used for a wide range of applications, from low-power, high-speed switching to high-power, high-voltage switching. This makes it an attractive option for many power switching applications.
The specific data is subject to PDF, and the above content is for reference
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| 2SK33720UL | Panasonic El... | 0.0 $ | 1000 | JFET N-CH 2MA 100MW SSSMI... |
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| 2SK3431-AZ | Renesas Elec... | 0.0 $ | 1000 | MOSFET N-CH 40V 83A TO220... |
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