
Allicdata Part #: | 2SK4177-DL-E-ND |
Manufacturer Part#: |
2SK4177-DL-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 1500V 2A D2PAK |
More Detail: | N-Channel 1500V 2A (Ta) 80W (Tc) Surface Mount SMP... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | SMP-FD |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 80W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 380pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 37.5nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 13 Ohm @ 1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Ta) |
Drain to Source Voltage (Vdss): | 1500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The 2SK4177-DL-E is a single-channel MOSFET (metal oxide semiconductor field-effect transistor) made by Renesas Electronics Corporation. It is part of their UltraLOW ON-Resistance “K” series, which features low power loss, high-speed operation and improved noise resistance.
This particular device is categorized as a discrete FET (field-effect transistor) with an N channel type construction and SANYO-V7K2 process technology. Its main applications include DC-DC converters, motor control circuits and optical disc devices. The maximum drain current for this device is ----A and a maximum drain-source voltage of ----V for most applications. It is available in a TO-220 package with a maximum junction temperature of 175⁰C.
The 2SK4177-DL-E’s operation is based on the principle of a MOSFET, wherein an electric field between the source and drain controls an electric current through the device. A gate signal is used to control the electric field, thus controlling the amount of current flowing through the device. A MOSFET’s power dissipation is generally low at a given drain current, providing greater efficiency compared with traditional bipolar transistors.
The 2SK4177-DL-E is suitable for low-side switching in DC-DC converters and can be used in applications such as motor control and power switching. It features a low RDS(ON) (drain-source on-resistance) of 0.14 ohms allowing for higher efficiency and lesser power dissipation than other available devices. The device also has a maximum operating temperature of 175⁰C and a threshold voltage of 4V, making it suitable for use in harsh environments.
In conclusion, the 2SK4177-DL-E is a single-channel MOSFET for use in DC-DC converters, motor control circuits and optical disc devices. This device is power efficient and offers reliable operation in a wide range of environments and applications. With its high-speed operation, low power loss and improved noise resistance, it can be used for a variety of applications where high performance and reliability are required.
The specific data is subject to PDF, and the above content is for reference
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