2SK4177-DL-E Allicdata Electronics
Allicdata Part #:

2SK4177-DL-E-ND

Manufacturer Part#:

2SK4177-DL-E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 1500V 2A D2PAK
More Detail: N-Channel 1500V 2A (Ta) 80W (Tc) Surface Mount SMP...
DataSheet: 2SK4177-DL-E datasheet2SK4177-DL-E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: SMP-FD
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 80W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 37.5nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 13 Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drain to Source Voltage (Vdss): 1500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The 2SK4177-DL-E is a single-channel MOSFET (metal oxide semiconductor field-effect transistor) made by Renesas Electronics Corporation. It is part of their UltraLOW ON-Resistance “K” series, which features low power loss, high-speed operation and improved noise resistance.

This particular device is categorized as a discrete FET (field-effect transistor) with an N channel type construction and SANYO-V7K2 process technology. Its main applications include DC-DC converters, motor control circuits and optical disc devices. The maximum drain current for this device is ----A and a maximum drain-source voltage of ----V for most applications. It is available in a TO-220 package with a maximum junction temperature of 175⁰C.

The 2SK4177-DL-E’s operation is based on the principle of a MOSFET, wherein an electric field between the source and drain controls an electric current through the device. A gate signal is used to control the electric field, thus controlling the amount of current flowing through the device. A MOSFET’s power dissipation is generally low at a given drain current, providing greater efficiency compared with traditional bipolar transistors.

The 2SK4177-DL-E is suitable for low-side switching in DC-DC converters and can be used in applications such as motor control and power switching. It features a low RDS(ON) (drain-source on-resistance) of 0.14 ohms allowing for higher efficiency and lesser power dissipation than other available devices. The device also has a maximum operating temperature of 175⁰C and a threshold voltage of 4V, making it suitable for use in harsh environments.

In conclusion, the 2SK4177-DL-E is a single-channel MOSFET for use in DC-DC converters, motor control circuits and optical disc devices. This device is power efficient and offers reliable operation in a wide range of environments and applications. With its high-speed operation, low power loss and improved noise resistance, it can be used for a variety of applications where high performance and reliability are required.

The specific data is subject to PDF, and the above content is for reference

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