2SK4065-E

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Field-effect transistors (FETs) are a type of semiconductor device that can be used to amplify electrical signals or as a switch. The 2SK4065-E power MOSFET is an example of a single N-channel FET. This device is designed for the power switching applications, such as low-voltage, low- current, low-power DC-DC converters, relays, solenoids, lamps and LEDs, and so on.

The 2SK4065-E is a high-speed, low on-resistance MOSFET. The device has an operating drain current of up to 35A (maximum) and can operate up to a voltage of 600V. In addition, the device has a maximum drain-to-source voltage (VDS) of 600V and a maximum gate-to-source voltage (VGS) of 20V.

The 2SK4065-E works by utilizing the field-effect principle. In this device, the drain and source terminals are connected by an N-type semiconductor channel. When a voltage is applied to the gate of the device, a control current is generated, resulting in a sharp contrast from the resulting current. This is known as the channel effect, which causes the current in the channel to be modulated by the gate voltage.

The 2SK4065-E is designed for use in low-voltage, low-current, low-power switching applications. The device can be used in a variety of switching applications, such as relays, solenoids, lamps and LEDs, DC-DC converters, and so on. The device is able to handle very high currents and can operate at high frequencies due to its low on-resistance.

The device can also be used in high-frequency circuits and provides good immunity to EMI, making it ideal for use in high-speed switching systems. The device also has a low capacitance, which results in low switching losses.

In addition, the 2SK4065-E is designed with a low gate charge, which allows it to work reliably and reduce the cost of the application.

The 2SK4065-E is a highly efficient power MOSFET designed for low-voltage, low-current, low-power switching applications. The device can operate at high frequencies and handle high currents, making it suitable for a variety of switching applications. Its low on-resistance and low gate charge also make it an ideal choice for high-speed switching systems.

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