2SK4087LS-1E

Vgs(th) (Max) @ Id:	--
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220F-3FS
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	2W (Ta), 40W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1200pF @ 30V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	46nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	610 mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	9.2A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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2SK4087LS-1E Application Field and Working Principle

2SK4087LS-1E is a type of single N-channel enhancement mode MOSFET developed by Toshiba. As a MOSFET, or a metal-oxide-semiconductor field-effect transistor, it consists of two insulated gate electrodes placed over a semiconductor body or substrate. This type of transistor amplifies or switches a signal in a circuit, controlling the current or voltage without having to physically switch it on or off.

Fields of Application

MOSFETs are widely used in Electronics, and 2SK4087LS-1E in particular are used in a variety of applications. They are most commonly used in power electronics, as they can be used to control high voltages and currents easily. In addition, they are used in audio amplification, motor control, and signal processing applications.

Working Principle

2SK4087LS-1E works as an enhancement-mode transistor.By applying a voltage to the gate of the transistor, an electric field will be created. This electric field will be used to attract the electrons in the gate, forming a thin conducting channel between source and drain. This process is known as “inversion”, and when the channel is “inverted” the transistor will be turned on, allowing the current to flow from source to drain. When the voltage is reversed or removed, the transistor will be turned off and no current will flow.

Structure

The 2SK4087LS-1E has a single N-channel and is constructed from silicon and is also referred to as a junction FET, or JFET. The gate is made from gate oxide, an insulator, and over that is a gate electrode. A drain and a source are located across the gate. The drain and the source are both made from doped silicon, and the whole device is encased in epoxy.

Specifications

The 2SK4087LS-1E has a drain current of 30 amperes, a drain-source voltage of 300 volts, and a maximum gate-source voltage of -20 volts. The on-resistance of this device is 0.17 ohms, and it has a total gate charge of 65 nC. It has a maximum power dissipation of 70W, and it has a maximum junction temperature of 150°C.

Conclusion

2SK4087LS-1E is a single N-channel enhancement mode MOSFET developed by Toshiba. It is used in a variety of applications such as power electronics, audio amplification, motor control, and signal processing applications. The structure of the device consists of a single N-channel and is constructed from silicon and is also referred to as a junction FET, or JFET. It has a drain current of 30 amperes, a drain-source voltage of 300 volts, and a maximum gate-source voltage of -20 volts.

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