Allicdata Part #: | 869-1070-ND |
Manufacturer Part#: |
2SK4124 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 20A TO-3PB |
More Detail: | N-Channel 500V 20A (Ta) 2.5W (Ta), 170W (Tc) Throu... |
DataSheet: | 2SK4124 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3PB |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 170W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 30V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 46.6nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 430 mOhm @ 8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Ta) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tray |
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2SK4124 is a high power MOSFET that is under the single FETs category. The chip is developed by Toshiba Corporation, a Japanese based manufacturer. It is considered to be a power transistor and its main applications are in regulating and controlling power supplies, inverters and switching applications. This makes it ideal for SMPS (Switch Mode Power Supply) applications in high frequency range, as well as for motor control. It has a wide range of features, including its low drain-source on-resistance, high power efficiency and excellent power handling capability, making it ideal for numerous high-level applications.
The 2SK4124 is designed with N-Channel type configuration. The Drain is connected to the gate, while the gate and source are isolated from each other. The device made up of silicon material, with a total gate charge of 2.5 nC and a threshold voltage of 3.4V, is protected by a 200V drain source voltage. With a current rating of 100A, it is suitable for high dissipation power semiconductor applications.
In terms of working principle, the MOSFET device is a voltage controlled device where the voltage difference between gate and source controls a field effect. The device is made up of a P-type substrate and two N-type gate layers which are connected to the drain and the source through silicon oxide. A gate voltage is applied between the two layers, creating an electric field at the surface that controls the current flow. The electric field created by the gate voltage moves charge carriers in the substrate and creates a channel. The current flows through this channel and if the gate voltage is appropriate, the current will remain constant.
This MOSFET also features a faster switching time with low input capacitance and low output capacitance, making it suitable for high speed applications. This combination of faster switching and low capacitance also offers less loss for high frequency signal switching. Lastly, this device has a high temperature operating range of -55°C to 150°C, and exceptional thermal handling.
Overall, the 2SK4124 MOSFET is a versatile power switch that offers many features and benefits. It is widely used in a variety of applications ranging from power supplies, inverters, and motor controls to high frequency signal switching. It is highly reliable, efficient, and offers excellent power handling capabilities, making it a popular choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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