Allicdata Part #: | 2SK4089LS-ND |
Manufacturer Part#: |
2SK4089LS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 650V 12A TO-220FI |
More Detail: | N-Channel 650V 8.5A (Tc) 2W (Ta), 40W (Tc) Through... |
DataSheet: | 2SK4089LS Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FI(LS) |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta), 40W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 30V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 45.4nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 720 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8.5A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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.The 2SK4089LS is a single-mode field-effect transistor (FET) that is commonly used in various electronic circuits, such as power amplifiers and digital circuits. FETs use a type of semiconductor material known as a three-terminal active device. In FETs, an applied electric field creates a channel between two electrodes, with the current flowing from one electrode to another. This type of single-mode FET offers many advantages, such as very low power consumption and high switching speed.
The 2SK4089LS is an N channel enhancement mode VDMOS FET that has a drain-source voltage of 20V, a drain current of 33A, a gate-source voltage of 8V, and a drain-source on-resistance of just 0.3 ohms. All of these characteristics make the 2SK4089LS an ideal choice for use in a variety of applications, such as motor control, power supplies, switching power converters, and audio applications. It is especially well-suited for applications where the power supply has a high voltage rating, but low current needs.
The 2SK4089LS is made up of a semiconductor wafer substrate and an insulating gate oxide layer. The gate oxide layer is formed by depositing a thin layer of silicon dioxide on the wafer. This insulator is then covered with a gate electrode, which is typically made from doped polysilicon. The gate oxide and gate electrodes form the channels for the electric field to flow across. A source electrode is also connected to the semiconductor wafer, from which the electric current flows.
The 2SK4089LS operates using an enhancement-mode transistor switch. When a positive gate bias is applied to the source, electrons become trapped in the silicon dioxide and form a conductive channel between the source and drain. This conducts the current and turns on the device. By applying a negative gate bias, the electrons are released, causing the channel to shut off, which turns the device off.
The 2SK4089LS is a useful FET for a variety of tasks. Its low on-resistance, low input capacitance, and high frequency characteristics make it well-suited for high speed switching applications. Its wide range of supply voltage ratings and its wide temperature range make it suitable for a variety of environments and conditions. Its low input capacitance also makes it ideal for use in low noise applications, such as audio and video amplifiers.
In summary, the 2SK4089LS is a single-mode field-effect transistor with a variety of applications. It is well-suited for use in power supplies, switching power converters, digital circuits, motor control, and audio applications due to its low on-resistance, high switching speed, and wide temperature range. It is also ideal for low noise applications due to its low input capacitance. With its versatility and reliability, the 2SK4089LS is a valuable component for many electronic circuits.
The specific data is subject to PDF, and the above content is for reference
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