2SK4125-1EX

Vgs(th) (Max) @ Id:	--
Package / Case:	TO-3P-3, SC-65-3
Supplier Device Package:	TO-3P-3L
Mounting Type:	Through Hole
Operating Temperature:	150°C (TA)
Power Dissipation (Max):	2.5W (Ta), 170W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1200pF @ 30V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	46nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	610 mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	17A (Ta)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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<p>The 2SK4125-1EX transistor is a single-channel, high-speed, low-on resistance Field-Effect Transistor (FET). It is an enhancement-mode device, consisting of a gate, drain, and source. The gate is where the control current enters the device, which controls the amount of current that flows between the drain and the source. This type of transistor is used in a wide variety of applications and is typically used to switch, amplify, and regulate signals in the 10-100 MHz frequency range. </p><p>The 2SK4125-1EX FET has a variety of applications. It can be used in amplifier circuits, for voltage regulation, as a power switch, and in digital logic circuits. It is commonly used in high-frequency, digital, and analog applications such as wireless communications, high-speed data transfer, and automotive applications. It is commonly used to switch, amplify, and regulate signals in the 10-100 MHz frequency range. It is also used in high-power amplifiers and power supplies, where it switches, amplifies, and regulates high-frequency signals. </p><p>The 2SK4125-1EX FET is a linear device, meaning that it operates within a fixed range of current and voltage. The linearity of the device allows it to operate in a stable and predictable way. When the gate voltage of the device is higher than the drain-source voltage, the device is turned on and current flows from the drain to the source. When the gate voltage is lower than the drain-source voltage, the device is turned off and no current is allowed to flow. The device behaves in a linear manner within this range and thus can be used for low-power amplification and frequency modulation. </p><p>The 2SK4125-1EX FET is a low-on resistance device, which means that it has a very low resistance when the drain-source voltage is between the gate voltage and the drain voltage. This makes the device ideal for applications that require high current while still providing a low resistance. This type of FET is also ideal for applications that require low power consumption, because the low-on resistance allows for high efficiency with minimal power loss.</p><p>The 2SK4125-1EX FET is an incredibly versatile transistor that can be used in a wide range of applications. It is an ideal device for high-frequency, digital, and analog applications because it provides low-on resistance and is able to switch, amplify, and regulate high-frequency signals. It is also an ideal device for switching, amplifying, and regulating voltage and current. It is a linear device, meaning that it operates within a fixed range of current and voltage, ideal for low-power amplification and frequency modulation. Finally, it is a low-on resistance device, providing excellent power efficiency with minimal power loss.</p>

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