Allicdata Part #: | 2SK4021(Q)-ND |
Manufacturer Part#: |
2SK4021(Q) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 250V 4.5A PW-MOLD2 |
More Detail: | N-Channel 250V 4.5A (Ta) 20W (Tc) Through Hole PW-... |
DataSheet: | 2SK4021(Q) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3.5V @ 1mA |
Package / Case: | TO-251-3 Stub Leads, IPak |
Supplier Device Package: | PW-MOLD2 |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 20W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 440pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1 Ohm @ 2.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Ta) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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The 2SK4021 (Q) is a field effect transistor commonly used in many applications, especially those involving the transfer of electrical current. The device is classified as a single MOSFET, meaning that it is capable of carrying a relatively large electrical current while maintaining a low input voltage, meaning it can operate at very low voltage levels.The 2SK4021 (Q) is a high-power, low-power device, designed to minimize power consumption while still providing an output with a high degree of power density. The device is available in various packages, allowing it to be used in a wide range of applications.The 2SK4021 (Q) operates in drain-source saturation mode. This mode of operation is characterized by the output voltage remaining relatively constant across the drain and source terminals. The 2SK4021 (Q) can be used in many different applications, such as power switching, amplifier or oscillator applications.The basic operating principle involves the flow of current through a channel in the semiconductor. This channel is formed between two metal-oxide-semiconductor (MOSFET) structures, which are essentially metal-insulated-gate constructions. When a gate voltage is applied, electrons are attracted to the channel and form an electrochemical layer under the gate. This layer acts as a barrier between the input and output terminals, allowing proper conduction to take place.The 2SK4021 (Q) has been designed to provide an efficient and reliable way of controlling the flow of current. It is designed to work with a wide range of input voltages and is capable of carrying a large amount of current. This makes it ideal for applications with high current loads, such as power switching, amplifier or oscillator applications.When it comes to current control, the 2SK4021 (Q) is able to operate in both linear and switching modes. In linear mode, the current flow is dependent on the input voltage and the device will follow the input voltage swings. However, when the device is operating in the switching mode, the current is determined by the input voltage and will stay constant until a new voltage is applied. This makes it ideal for applications in which the current flow needs to be precise.In addition to its versatile current control capabilities, the 2SK4021 (Q) is also considered to be a low-cost and highly efficient device. This is due to its low-power requirements and the fact that it does not require a thermal management subsystem, meaning it can operate without generating excessive heat.In conclusion, the 2SK4021 (Q) is an ideal choice for a wide range of applications, such as power switching, amplifier or oscillator designs. This is thanks to its ability to operate in both linear and switching modes, while also providing an efficient and reliable way of controlling current flow. It is also a low-cost and highly efficient device, meaning it can be used in a wide range of applications without the need for a thermal management system.
The specific data is subject to PDF, and the above content is for reference
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