2SK4117LS Allicdata Electronics
Allicdata Part #:

2SK4117LS-ND

Manufacturer Part#:

2SK4117LS

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 400V 15A TO-220FI
More Detail: N-Channel 400V 10.4A (Tc) 2W (Ta), 35W (Tc) Throug...
DataSheet: 2SK4117LS datasheet2SK4117LS Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FI(LS)
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 35W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 30V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 30.6nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 420 mOhm @ 7.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10.4A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk 
Description

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The 2SK4117LS is a small signal N-channel silicon power MOSFET (Metal Oxide Semiconductor Field Effect Transistor). This type of transistor is used in a variety of circuits, from power management and amplifiers to switching systems. As a silicon-based semiconductor, it is made up of two types of material: a substrate and a gate electrode. The gate electrode is used to control the flow of current through the device, and is activated or deactivate by an electrical signal applied to it.

When the 2SK4117LS is in the "on" state, current can flow freely between the source terminal and the drain terminal of the device. The amount of current that can flow is determined by the width of the gate electrode, which can be adjusted to allow a specific voltage range to pass through. The resistance between the source and drain terminals can be adjusted by the voltage applied to the gate electrode. This ability to control current flow makes the 2SK4117LS the perfect choice for a variety of applications, especially where a low-power device is needed.

The 2SK4117LS has many applications in power management, amplifiers, and switching circuits. In power management, it is used to regulate current flow in high-frequency circuits. It is also used in amplifiers to increase the gain of the signal, and in switching circuits to control the timing of power flow. As a low-power device, it can be used in small-signal circuits, such as driving LEDs and buzzers.

The working principle of a 2SK4117LS involves the propagation of electrons from the source terminal to the drain terminal. The voltage applied to the gate electrode of the MOSFET controls the barrier between the source and drain terminals, which in turn controls the size of the electrical current that can pass through the device. When the gate voltage is low, the barrier is large and the current is blocked. When the gate voltage is increased, the barrier is reduced and the current can flow freely. The ability to control the size of the current makes the 2SK4117LS an ideal choice for a variety of applications.

In conclusion, the 2SK4117LS is a versatile transistor that can be used in a variety of applications. It is an N-channel silicon-based power MOSFET with a gate electrode that can be used to control the size of the electrical current flowing through the device. As a low-power device, it is perfect for small-signal circuits, amplifiers, and switching systems. With its ability to control current flow, the 2SK4117LS is sure to be a valuable addition to any engineer’s collection of parts.

The specific data is subject to PDF, and the above content is for reference

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