Allicdata Part #: | 2SK4209-ND |
Manufacturer Part#: |
2SK4209 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 800V 12A TO-3PB |
More Detail: | N-Channel 800V 12A (Ta) 2.5W (Ta), 190W (Tc) Throu... |
DataSheet: | 2SK4209 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 800V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.08 Ohm @ 6A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 75nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1500pF @ 30V |
FET Feature: | -- |
Power Dissipation (Max): | 2.5W (Ta), 190W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-3PB |
Package / Case: | TO-3P-3, SC-65-3 |
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The 2SK4209 is a field-effect transistor (FET) used in many applications. It is a single-gate FET, which means that it can be used to control the current in a circuit. The on/off state of the 2SK4209 is determined by the amount of an electrical charge on the gate. When the gate voltage is raised, the device is on and when it is lowered, the device is off.
The 2SK4209 is a part of a large family of FETs that are used in many different applications. They can be used in computer circuitry, radio transmitters, power supplies, and more. They are also used in audio amplifiers, switching circuits, and as switches in communication systems.
The 2SK4209 is a type of metal-oxide semiconductor FET (MOSFET). This type of FET has a metal-oxide layer between the gate electrode and the source and drain electrodes. This layer isolates the gate from the source and drain. This configuration allows for very high current capacity, making it ideal for use in power applications. The 2SK4209 is often used for controlling power to large electronic devices, such as TVs and computers.
The working principle of the 2SK4209 is that when a positive voltage is applied to the gate, a channel will be created between the source and drain electrodes. This enables current to flow through the channel, and the device is said to be in the "on" state. When the voltage is removed, the channel is no longer active, so current cannot flow through the device and it is in the "off" state.
One important advantage of the 2SK4209 is its drain-source breakdown voltage. This voltage is the maximum voltage that can be applied to the drain terminal of the FET before it breaks down and current can no longer be controlled. The 2SK4209 has a high drain-source breakdown voltage, which makes it suitable for use in high-voltage applications.
The 2SK4209 is an important component in many electronic applications. It is widely used in communication systems, auto-start systems, power circuits, and more. The device is also used in the control of motors and other large electronic devices. It has a long service life and is highly reliable. The 2SK4209 is an ideal choice for use in high-power applications.
The specific data is subject to PDF, and the above content is for reference
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