Allicdata Part #: | 2SK4066-DL-1E-ND |
Manufacturer Part#: |
2SK4066-DL-1E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 100A |
More Detail: | N-Channel 60V 100A (Ta) 1.65W (Ta), 90W (Tc) Surfa... |
DataSheet: | 2SK4066-DL-1E Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Rds On (Max) @ Id, Vgs: | 4.7 mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 220nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 12500pF @ 20V |
FET Feature: | -- |
Power Dissipation (Max): | 1.65W (Ta), 90W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-263-2 |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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The 2SK4066-DL-1E is a single n-channel type insulated gate field effect transistor (IGFET). It belongs to the family of one of the most important and popular semiconductor devices: the field effect transistor (FET). This particular device was developed and manufactured by International Rectifier, and is one of their renowned products in the field of FET technology.
A field effect transistor (FET) is a three terminal device that utilizes the movement of charge carriers - grouped together, electrons and holes - in a semiconductor channel. A gate voltage applied to the control terminal, the Gate, modulates the flow of charge carriers by applying a field that varies the width of the transistor channel. When the channel is wide the transistor is on, allowing most of the charge carriers to pass through the channel. When the gate voltage is reduced the channel will become decreased, decreasing the current and voltage between the drain and source and effectively turning the transistor off. FETs feature an extremely high input impedance, the active region gate can control the source or drain current, with either the gate (bipolar transistors) or the voltage at the source or drain terminals (unipolar transistors).
The specific 2SK4066-DL-1E transistor has a drain-source voltage rating at -25V, and can carry a current output equal to 0.6A. This is a fair rating for such a device, as it provides adequate power for many applications. The transistor also features protection against static discharge and overvoltage. With its built-in protection the device can be safely used in a variety of circuits needing protection and control.
The 2SK4066-DL-1E FET has versatile uses in industrial and consumer electronics, robotics, and computer driven systems. This particular transistor can be used for a variety of tasks including voltage regulation and power control. It can be used as a switch, an amplifier, and a power supply monitor amongst other things. The ease of use and the built-in protection makes it valuable in everyday situations.
As the FET technology is constantly evolving, the 2SK4066-DL-1E serves well both in traditional and modern electronic applications. Its most popular uses can be found in audio equipment and in automotive engines. These applications require high current outputs and flexibility in how current is controlled, and this particular FET provides these key qualities.
The 2SK4066-DL-1E is an invaluable piece of modern technology. Not only is it easy to use, but it also provides high levels of current, making it an essential part of a variety of consumer and industrial applications. Its excellent design makes it a reliable and durable transistor, and its comprehensive built-in protection means that it is secure in all foreseeable conditions.
The specific data is subject to PDF, and the above content is for reference
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