2SK4210 Allicdata Electronics
Allicdata Part #:

2SK4210-ND

Manufacturer Part#:

2SK4210

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 900V 10A TO-3PB
More Detail: N-Channel 900V 10A (Ta) 2.5W (Ta), 190W (Tc) Throu...
DataSheet: 2SK4210 datasheet2SK4210 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3PB
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 190W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 30V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drain to Source Voltage (Vdss): 900V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tray 
Description

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The 2SK4210 is an depletion-mode silicon N-channel MOSFET (Metal–Oxide–Semiconductor Field-Effect Transistor) produced by Toshiba. It is a wide-bandwidth, low-noise transistor that is found in many amps and preamps as it is suitable for low-noise RF amplifiers, switches, and analog switches. It has a low on-resistance and low gate-source capacitance, making it popular in audio applications. The 2SK4210 is part of the family of depletion-mode MOSFETs, which have an open circuit between the source and drain when the gate is zero volts.

The working principle of the 2SK4210 is based on the transfer of charge between source and drain through the gate of the device. The transfer is performed when the positive gate voltage is applied and it allows current to flow from source to drain. The gate voltage must be reversed for current to flow from drain to source. This arrangement makes the 2SK4210 a relatively low-power device, as the required gate voltage is quite low.

The 2SK4210 MOSFET is used in a variety of circuits that require high input impedance and low power requirements, such as video amplifiers and audio amplifiers. It is also often used as muting and switching for low-power Class-D amplifiers, where it can be used in place of a mechanical switch. Its low conductance makes it suitable for high-frequency switching applications where it can switch signals up to 5 kHz in an efficient manner. It can also be used in phase shift switching, as its small capacitance and low gate charge makes it suitable for phase-shift applications.

The 2SK4210 can also be used in switching applications where high-speed operation is required, such as in waveform generator circuits. When used in such circuits, the 2SK4210 allows the circuit to switch quickly in response to input signals, which can be used to produce waveforms in the circuit.

The 2SK4210 can also be used in high-voltage applications, such as in driver circuits for DC to AC inverters, as it has an excellent thermal resistance and can handle up to 500 volts of reverse gate voltage. This makes it a suitable choice for applications that require fast switching with high current carrying capacity.

Finally, the 2SK4210 can also be used in RF applications and is often found in RF amplifiers. Due to its low capacitance and low gate charge, the 2SK4210 is a suitable choice for RF amplifiers, where high frequency operation and low noise are required.

In conclusion, the 2SK4210 is a versatile depletion-mode N-channel MOSFET that is suitable for a wide variety of applications. Its low on-resistance and low gate-source capacitance make it an ideal choice for audio applications, and it is also suitable for applications that require high speed operation and high current. Its versatility makes it a popular choice in many industries, and it can be found in a variety of applications including audio amplifiers, video amplifiers, driver circuits, waveform generator circuits and RF amplifiers.

The specific data is subject to PDF, and the above content is for reference

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