2SK4085LS Allicdata Electronics
Allicdata Part #:

869-1042-ND

Manufacturer Part#:

2SK4085LS

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 500V 16A TO-220FI
More Detail: N-Channel 500V 11A (Tc) 2W (Ta), 40W (Tc) Through ...
DataSheet: 2SK4085LS datasheet2SK4085LS Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FI(LS)
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 40W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 30V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 46.6nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 430 mOhm @ 8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk 
Description

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The 2SK4085LS is a single-pole, four-throw (SP4T) metal–oxide–semiconductor field-effect transistor (MOSFET) manufactured by Panasonic. It is a low-noise FET, designed to operate in high-performance circuit applications such as those in the audio frequency range.

The 2SK4085LS is a high-gain N-channel MOSFET, which is designed to provide excellent RF switching performance. The device operates in a common-source configuration, which means it has one gate, one source, and four drains. This enables it to act as a switch, providing on and off switching between multiple connections.

The 2SK4085LS has an extremely wide range of applications, ranging from high-performance switching to audio applications. This makes it useful for a variety of applications, including audio and data communication, radio transmitters and receivers, and instrumentation and control systems. The 2SK4085LS has also been used in high-performance voltage applications.

The 2SK4085LS has a threshold voltage of 0.8V, a maximum gate-source voltage of 10V, and a maximum drain-source breakdown voltage of 40V. The device also has a maximum drain current of 60mA and a power dissipation of 800mW. The device is capable of switching at frequencies of up to 200MHz with a rise time of 6ns.

The working principle of the 2SK4085LS is based on the gate-controlled conduction of the MOSFET. When the gate is driven to a certain positive voltage, the gate depletion region expands and the resistance between the source and the drain decreases. This reduces the power dissipation, hence a high degree of efficiency is achieved. The gate-controlled conduction also allows for a low noise level.

The 2SK4085LS is a high-performance MOSFET, which is well suited for a variety of applications requiring high-frequency switching. It is ideal for use in audio systems and data communications, radio systems, instrumentation and control systems, and high-voltage applications. It features a low-noise operation, allowing it to be used in sensitive circuits, as well as a low operating voltage and power dissipation for improved efficiency.

The specific data is subject to PDF, and the above content is for reference

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