Allicdata Part #: | 869-1042-ND |
Manufacturer Part#: |
2SK4085LS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 16A TO-220FI |
More Detail: | N-Channel 500V 11A (Tc) 2W (Ta), 40W (Tc) Through ... |
DataSheet: | 2SK4085LS Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FI(LS) |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta), 40W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 30V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 46.6nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 430 mOhm @ 8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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The 2SK4085LS is a single-pole, four-throw (SP4T) metal–oxide–semiconductor field-effect transistor (MOSFET) manufactured by Panasonic. It is a low-noise FET, designed to operate in high-performance circuit applications such as those in the audio frequency range.
The 2SK4085LS is a high-gain N-channel MOSFET, which is designed to provide excellent RF switching performance. The device operates in a common-source configuration, which means it has one gate, one source, and four drains. This enables it to act as a switch, providing on and off switching between multiple connections.
The 2SK4085LS has an extremely wide range of applications, ranging from high-performance switching to audio applications. This makes it useful for a variety of applications, including audio and data communication, radio transmitters and receivers, and instrumentation and control systems. The 2SK4085LS has also been used in high-performance voltage applications.
The 2SK4085LS has a threshold voltage of 0.8V, a maximum gate-source voltage of 10V, and a maximum drain-source breakdown voltage of 40V. The device also has a maximum drain current of 60mA and a power dissipation of 800mW. The device is capable of switching at frequencies of up to 200MHz with a rise time of 6ns.
The working principle of the 2SK4085LS is based on the gate-controlled conduction of the MOSFET. When the gate is driven to a certain positive voltage, the gate depletion region expands and the resistance between the source and the drain decreases. This reduces the power dissipation, hence a high degree of efficiency is achieved. The gate-controlled conduction also allows for a low noise level.
The 2SK4085LS is a high-performance MOSFET, which is well suited for a variety of applications requiring high-frequency switching. It is ideal for use in audio systems and data communications, radio systems, instrumentation and control systems, and high-voltage applications. It features a low-noise operation, allowing it to be used in sensitive circuits, as well as a low operating voltage and power dissipation for improved efficiency.
The specific data is subject to PDF, and the above content is for reference
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