Allicdata Part #: | 2SK4150TZ-E-ND |
Manufacturer Part#: |
2SK4150TZ-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CH 250V 0.4A TO-92 |
More Detail: | N-Channel 250V 400mA (Ta) 750mW (Ta) Through Hole ... |
DataSheet: | 2SK4150TZ-E Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 250V |
Current - Continuous Drain (Id) @ 25°C: | 400mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4V |
Rds On (Max) @ Id, Vgs: | 5.7 Ohm @ 200mA, 4V |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 3.7nC @ 4V |
Vgs (Max): | ±10V |
Input Capacitance (Ciss) (Max) @ Vds: | 80pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 750mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-92 |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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The 2SK4150TZ-E is a single-component FET (Field Effect Transistor) and it is a subcategory of MOSFETs (Metal-Oxide Semiconductor Field Effect Transistor). The device is a N-Channel MOSFET, meaning it is made of silicon layers that control and restrict the flow of current through a semiconductor channel. It is used in a variety of electronic applications such as switches, amplifiers, and logic circuits.
The 2SK4150TZ-E is designed for use in high-frequency switching operations, with its single component design promising to increase the overall efficiency of devices using it. The device also offers high-speed saturation of the MOSFET and can handle large power levels. The 2SK4150TZ-E also has a low On-resistance of 0.25 Ohms, which can reduce the amount of power consumed for a given operation.
In terms of its working principle, the 2SK4150TZ-E controls the amount of current that flows through the source and drain of the semiconductor. This current is controlled by two gates, which are located on either side of the source and drain terminals. When an electric charge is applied to the gate, it acts as a gate voltage and creates a small channel in the semiconductor material, which allows current to flow. When the charge is removed, the channel is closed and the current stops flowing. This ability to continuously open and close the channel helps to control the amount of current flowing through the device.
The 2SK4150TZ-E can be used in a variety of electronic applications, such as TV receivers, power amplifiers, switching power supplies, and logic circuits. In TV receivers, it is placed between the power supply and the signal processing circuits, which enables it to switch on and off the signal being received. In switching power supplies, it can be used to switch on and off specific parts of the circuit and provides clean switching without any distortion. Finally, in logic circuits, it helps to generate or control logic signals or components, allowing for complex circuits and operations.
The 2SK4150TZ-E is a versatile device that can be used in a variety of applications. Its single-component design offers increased efficiency, high-speed switching and low power consumption, making it a great choice for many electronic applications. The device also provides clean and reliable operation, allowing for greater control over circuits and helping to achieve complex operations.
The specific data is subject to PDF, and the above content is for reference
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