2SK4151TZ-E

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	150V
Current - Continuous Drain (Id) @ 25°C:	1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4V
Rds On (Max) @ Id, Vgs:	1.95 Ohm @ 500mA, 4V
Vgs(th) (Max) @ Id:	--
Gate Charge (Qg) (Max) @ Vgs:	3.5nC @ 4V
Vgs (Max):	±10V
Input Capacitance (Ciss) (Max) @ Vds:	98pF @ 10V
FET Feature:	--
Power Dissipation (Max):	750mW (Ta)
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-92
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)

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2SK4151TZ-E MOSFETs are widely used in many electronics applications and they offer various advantages. In this article, we will discuss the application fields of 2SK4151TZ-E MOSFETs and their working principles. 2SK4151TZ-E MOSFETs are a type of N-channel MOSFETs (metal-oxide semiconductor field-effect transistors) that are widely used in many electronic applications and circuits. They are commonly used for switching, amplifying and controlling current or voltage signals in many applications, such as DC-DC converters, motor and solenoid drivers, and motor control circuits.The 2SK4151TZ-E MOSFET features a breakdown voltage of 55 V and an On-state resistance of 0.17mΩ. The device is also capable of delivering fast switching speeds, which is one of the main advantages of the device. It can operate at high frequencies and provide low input capacitance and low output capacitance. Other advantages of the device include its low drain-to-source leakage current, low reverse-transfer capacitance, and good temperature stability.The working principle of a 2SK4151TZ-E MOSFET is as follows: When voltage is applied to the gate of the device, the gate-source electric field increases and a thin conducting channel is formed between the drain and source of the MOSFET. This allows current to flow between the drain and source, thus allowing for switching and amplifying of current or voltage signals in electronic circuits.The 2SK4151TZ-E MOSFET is also extensively used in applications requiring fast switching, such as pulse-width modulation (PWM) applications, because of its fast switching capabilities. The device is also commonly used in motor and solenoid drivers, as it can provide up to 1A of continuous drain current with low resistance. Additionally, the device can also be used for DC-DC converter applications, as it can provide up to 50mΩ of On-state resistance.In conclusion, 2SK4151TZ-E MOSFETs are extensively used in many electronics applications. They offer a wide range of advantages, such as fast switching speeds, low On-state resistance, low reverse-transfer capacitance, and low drain-to-source leakage current. The working principle of a 2SK4151TZ-E MOSFET is based on increasing the gate-source electric field and forming a conducting channel between the drain and source of the device. The device is commonly used in many applications, such as DC-DC converter, motor and solenoid drivers, and motor control circuits.

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