2SK4066-DL-E

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The 2SK4066-DL-E is a N-Channel MOSFET transistor module from Toshiba with a maximum drain-to-source voltage of 500V, a maximum junction temperature of 175°C and a maximum Rdson of 0.228Ω. It is also available in a P-Channel version.

This high performance transistor module is designed for high frequency applications and is intended for use in switching and amplification circuits. It is suitable for use in power supplies, communications equipment, digital electronic equipment and more.

A field effect transistor (FET), such as the 2SK4066-DL-E, is an electronic device that has the ability to amplify a signal, control the flow of electrical current and enables rectifying power (power conversion). As a FET, the 2SK4066-DL-E transistor module has three terminals: a source, a drain, and a gate.

The gate of the 2SK4066-DL-E is the control element of the transistor. A small voltage applied to the gate will control the current flowing from the source to the drain. This voltage can be either positive or negative depending on the type of transistor. In the case of the 2SK4066-DL-E module, the gate is an N-channel type. An N-channel type transistor will conduct current when a positive gate voltage is applied.

The source of the 2SK4066-DL-E is the input of the transistor, and the drain is the output. When a voltage is applied to the gate and the source, current flows between the source and the drain. The voltage at the drain will be higher than the voltage at the source, which is why the 2SK4066-DL-E module is known as a ‘high side switch’. This device can be used in circuits such as motor drivers and power supplies.

The 2SK4066-DL-E is a powerful switch and one of the applications for this device is for power switching. This device is designed to switch large currents at high speeds and can be used in applications such as DC/DC converters, motor control, inverter circuits and power amplifiers. It is also suitable for switching high power at low voltages, making it ideal for applications where efficiency and power savings are important.

The 2SK4066-DL-E is also suitable for use in amplification circuits, where it can be used to increase signal strength, frequency and voltage level. In this application, the transistor’s gate acts as a control element that can be used to adjust the signal of the input signal. The elimination of reverse voltage can also be achieved using the 2SK4066-DL-E.

The 2SK4066-DL-E module is an extremely reliable and efficient N-channel MOSFET transistor which is suitable for a wide range of applications. It is perfect for use in high power switching, amplification and rectification circuits, as well as motor control, power supplies and more. With its maximum drain-to-source voltage of 500V, high performance and its ease of use, the 2SK4066-DL-E is a great addition to any circuit.

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