2SK4125 Allicdata Electronics
Allicdata Part #:

869-1071-ND

Manufacturer Part#:

2SK4125

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 600V 17A TO-3PB
More Detail: N-Channel 600V 17A (Ta) 2.5W (Ta), 170W (Tc) Throu...
DataSheet: 2SK4125 datasheet2SK4125 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3PB
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 30V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 610 mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tray 
Description

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The 2SK4125 transistor is a single-channel power MOSFET used in many different applications and circuits. It is a MOSFET (metal-oxide-semiconductor field-effect transistor) with an integrated gate-source protection system that prevents unwanted gate bias. Its high conductivity, low drain-source voltage loss, and stable operation make it an ideal device for switching, linear regulation, and power management.

The 2SK4125 is especially useful in applications such as switching power supplies, DC-DC converters, battery management systems, and load control modules. It can be used for both low- and high-voltage power applications, as well as in low-noise circuits. The device is also capable of sustained rated blocking voltage, making it ideal for use in high-voltage power supply applications.

The 2SK4125\'s operating principle is based on the field-effect transistor (FET) structure, which uses an electric field to modulate the current flow. It is one of two types of FETs, the other being a junction field-effect transistor (JFET). The 2SK4125 MOSFET contains a gate-to-source protection circuit, which prevents unwanted gate bias, making it a strong choice for high-current applications. Another notable feature of the device is its low drain-source voltage loss, which helps to reduce power loss in high frequency applications.

The 2SK4125 offers a number of advantages over other FETs in its class. Firstly, it is relatively inexpensive, making it an attractive choice for applications where cost is a primary concern. Additionally, its integrated gate-source protection circuit provides reliable protection for the gate in high-current applications. Finally, its low drain-source voltage loss makes it an excellent choice for high-frequency power management applications.

Given its many advantages, the 2SK4125 is an excellent choice for a wide variety of applications. From power supplies to battery management systems, the device offers reliable and efficient performance in a wide range of conditions and scenarios. As such, it is a great option for anyone looking for an affordable and efficient way to control their power needs.

The specific data is subject to PDF, and the above content is for reference

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