Allicdata Part #: | APTM100SKM90G-ND |
Manufacturer Part#: |
APTM100SKM90G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 1000V 78A SP6 |
More Detail: | N-Channel 1000V 78A (Tc) 1250W (Tc) Chassis Mount ... |
DataSheet: | APTM100SKM90G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 10mA |
Package / Case: | SP6 |
Supplier Device Package: | SP6 |
Mounting Type: | Chassis Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1250W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 20700pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 744nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 105 mOhm @ 39A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 78A (Tc) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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APTM100SKM90G is a type of insulated-gate field-effect transistor (IGFET) that is manufactured by the Toshiba Corporation. It is a three-terminal device with an enhancement-mode and an N-channel. It is typically used in audio amplifier applications, switching power supplies, and low-voltage circuits. The APTM100SKM90G is also suitable for audio and digital amplification and linear regulators.
Features of APTM100SKM90G
- High voltage rating of 100V
- Maximum drain square pulse current rating of 90A
- Low drain-source ON resistance of 0.026Ω
- Maximum junction temperature rating of 150°C
- Low output capacitance
- Low gate charge
Application Fields of APTM100SKM90G
The APTM100SKM90G is suitable for audio and digital amplification, switching power supply and low voltage circuit applications. It is also suitable for linear regulators where high-speed switching is required. It can be used in commercial and automotive power conversion applications. It is also suitable for Class-D audio amplifier applications, such as car sound systems, digital amplifiers, speakers, etc.
Working Principle of APTM100SKM90G
The APTM100SKM90G features an enhancement-mode and an N-channel. When the gate voltage is higher than the threshold voltage, the device turns on and the current can flow from the drain to the source. When the gate voltage is below the threshold voltage, the device turns off and there is no current flow. The gate voltage determines the drain current level and thus controls the device.
The device also features a voltage drop between its drain and source. When the device is in its on-state, a voltage drop will occur. This voltage drop is the result of the input resistance of the device, which is known as the drain-source ON resistance. The lower the drain-source ON resistance, the lower the voltage drop. The APTM100SKM90G has a low drain-source ON resistance of 0.026Ω.
Conclusion
The APTM100SKM90G is a type of insulated-gate field-effect transistor (IGFET) by Toshiba Corporation. It features a high voltage rating of 100V, maximum drain square pulse current rating of 90A and low drain-source ON resistance of 0.026Ω. It is suitable for audio amplifier applications, switching power supplies, and low-voltage circuits. It is also suitable for linear regulators where high-speed switching is required. The working principle of the APTM100SKM90G is based on an enhancement-mode and an N-channel. When the gate voltage is higher than the threshold voltage, the device turns on and the current can flow from the drain to the source. The lower the drain-source ON resistance, the lower the voltage drop. The APTM100SKM90G has a low drain-source ON resistance of 0.026Ω.
The specific data is subject to PDF, and the above content is for reference
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