APTM100UM45DAG

Vgs(th) (Max) @ Id:	5V @ 30mA
Package / Case:	SP6
Supplier Device Package:	SP6
Mounting Type:	Chassis Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Power Dissipation (Max):	5000W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	42700pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	1602nC @ 10V
Series:	POWER MOS 7®
Rds On (Max) @ Id, Vgs:	52 mOhm @ 107.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	215A (Tc)
Drain to Source Voltage (Vdss):	1000V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Bulk

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APTM100UM45DAG - FETs, MOSFETs and Single Transistors

A power transistor, such as the APTM100UM45DAG, is a semiconductor device that controls the flow of current without any additional inputs. They are primarily used in power electronics and systems, as well as in a wide range of other applications. The APTM100UM45DAG is a high power MOSFET from ON Semiconductor, an American semiconductor company. This device is incredibly versatile and reliable, making it an ideal choice for a variety of applications.

Functionality and Features

The APTM100UM45DAG is a fast, high power MOSFET designed for operation at voltages up to 100V and currents up to 45A. It has an on-resistance of 0.85Ω and a gate charge of 243 nC. It is suitable for use in a wide range of applications, including DC-DC converters, transformers, power supplies, and power stages, as well as a variety of other signal and power switching and control applications. The APTM100UM45DAG has a number of features that make it an ideal choice, including a wide range of gate-drive voltage requirements and a fast switching speed. Additionally, its low on-resistance makes it incredibly efficient, and its low gate charge reduces losses. It also has a low thermal resistance and can handle high power dissipation, allowing for more efficient operation.

Application Fields

The APTM100UM45DAG is suitable for a wide range of applications, including power stage electronics and power switching and control applications. It is commonly used in power supplies and DC-DC converters, as well as power stages and transformers. Additionally, it can be used in signal phase control and voltage regulators, as well as automotive and audio electronics and telecommunications equipment.

Working Principle

The APTM100UM45DAG is a specialized MOSFET designed with a built-in enhancement mode. This means that, when it is connected to an external load, it can provide efficient switching and control of current, allowing for tight control of voltage and current levels. The device is made up of two terminals and a gate. The two terminals are the source and drain, and the gate is used to control the flow of current through the device. When a voltage is applied to the gate, the source and drain terminals become conductive and allow current to flow. The device is designed to be able to switch quickly, allowing for efficient switching and control of current. Additionally, it can handle high power dissipation, making it a great choice for high-power applications.

Conclusion

The APTM100UM45DAG is a versatile and reliable power MOSFET designed to provide tight current and voltage control. It is suitable for a wide range of applications, including power stages, DC-DC converters, power supplies, transformers, and more. Additionally, its fast switching speed, low on-resistance, and high power dissipation capabilities make it an ideal choice for high-power applications.

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