APTM120DA68T1G Allicdata Electronics
Allicdata Part #:

APTM120DA68T1G-ND

Manufacturer Part#:

APTM120DA68T1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET N-CH 1200V 15A SP1
More Detail: N-Channel 1200V 15A (Tc) 357W (Tc) Chassis Mount S...
DataSheet: APTM120DA68T1G datasheetAPTM120DA68T1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Package / Case: SP1
Supplier Device Package: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 357W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6696pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 816 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 1200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk 
Description

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APTM120DA68T1G is a MOSFET with a single drain and drain to source breakdown voltage rating of 68V nominal and a maximum power dissipation of 120W. It is designed specifically for high-current, high-speed switching applications, making it an ideal choice in a wide range of electronic design applications.

APTM120DA68T1G MOSFETs are part of an advanced power MOSFET (APMOS) series, providing superior switching performance and low on-resistance. These MOSFETs are used in a variety of power management and power conversion circuits, including those used in automotive and other high-power applications. This particular MOSFET has a maximum drain current of 120A and a very low gate charge of only 10nC. Its maximum total gate charge is a mere 25nC, making it highly suitable for fast switching applications.

The working principle behind APTM120DA68T1G is quite simple. When the gate voltage is increased, the resistance between the drain and the source is greatly reduced. This tremendous decrease in resistance causes a rise in drain current, therefore allowing more current to flow through the circuit. Since the resistance between the drain and the source is substantially reduced, the power dissipated through the circuit is also decreased, resulting in an improved efficiency of the circuit.

APTM120DA68T1G MOSFETs are used in various AC/DC power conversion circuits, such as the boost and buck converters, and can help achieve improved efficiency and faster switching. They are also well suited for motor control, uninterruptible power supplies, and other high-power applications. Moreover, the low gate-to-drain capacitance make them well suited for RF applications as well.

Apart from its high-power applications, APTM120DA68T1G MOSFETs are also frequently used in medium and low-power applications, including LED drivers and digital logic circuits.

In conclusion, APTM120DA68T1G MOSFETs are designed to provide superior switching performance and low on-resistance, making them highly suitable for high-current, high-speed switching applications. Such applications include AC/DC power conversion circuits, motor control, LED drivers, digital logic circuits, and RF applications.

The specific data is subject to PDF, and the above content is for reference

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