APTM120DA30T1G

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The APTM120DA30T1G is a single P-Channel depletion-mode metal-oxide-semiconductor field-effect transistor (MOSFET) with a low threshold voltage of -30V and an output current capacity of up to 120A. This device is well-suited for power switch mode applications, such as used in computers, consumer electronics, and medical industries, where low voltage and high efficiency are required.

The APTM120DA30T1G device is a monolithic MOSFET with latch-up immunity, UL certified, and AEC-Q101 qualified. It is manufactured using a special process that results in an enhancement-mode FET structure with a P-channel source, drain and gate connections. The substrate and source region are connected to the drain contact making it a single-channel device. The FET has a low on-resistance of 4.5 Ω @ 25V, and a high breakdown voltage of 500V.

The APTM120DA30T1G device is designed with a low switching high-side N-channel drive which is suitable for fast switching applications. The MOSFET also has high EMI immunity due to its low-capacitive switching behavior and low noise. The device includes a parasitic bipolar transistor structure (BPT) to ensure safe operation and prevents potential latch-up and damage due to reverse-drain-gate biasing.

The APTM120DA30T1G device has a common source configuration and works on the principle of a two terminal JFET or junction FET. When a voltage difference is applied across the terminal of the device, current can enter or flow out through the gate and this process is known as channel conduction. The applied voltage between the gate and the source controls the current flow between the drain and source by acting as an electric field, modulating the field and consequently modifying the current. The gate of the APTM120DA30T1G device is insulated from the conducting channel region by a thin gate oxide layer, which is usually composed of silicon dioxide (SiO2). This insulation layer enables the device to work at a low region of significant current which makes possible to have a low threshold voltage.

Due to its low on-resistance, high breakdown voltage, and low threshold voltage, the APTM120DA30T1G device is mainly used in switch mode and power control applications. It is ideal for computer power supplies and consumer electronics such as audio amplifiers, power switches, and power converters. It is also suitable for medical devices due to its high EMI immunity and latch-up immunity.

In summary, the APTM120DA30T1G is a single P-Channel depletion-mode metal-oxide-semiconductor field-effect transistor (MOSFET) with a low threshold voltage of -30V and an output current capacity of up to 120A. It is well-suited for switch mode and power control applications, and is ideal for computer power supplies and consumer electronics such as audio amplifiers, power switches, and power converters, as well as for medical devices due to its high EMI immunity and latch-up immunity.

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