Allicdata Part #: | APTM100DA18T1G-ND |
Manufacturer Part#: |
APTM100DA18T1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 1000V 40A SP1 |
More Detail: | N-Channel 1000V 40A (Tc) 657W (Tc) Chassis Mount S... |
DataSheet: | APTM100DA18T1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 2.5mA |
Package / Case: | SP1 |
Supplier Device Package: | SP1 |
Mounting Type: | Chassis Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 657W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 14800pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 570nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 216 mOhm @ 33A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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APTM100DA18T1G transistor is a type of field-effect transistor (FET). A FET is a type of transistor which works on the basis of the flow of electrons between the gate and the source. Unlike silicon transistors which work on the basis of a small signal current, FETs uses a charge-coupled capacitor to control the flow of electrons between the gate and the source. When the capacitance is high, there is more current available and when it is low, the current flow is decrease. This makes FETs ideal for use in applications where power efficiency is a priority.
APTM100DA18T1G is a single-gate MOSFET offering great performance and impressively low power consumption. In a MOSFET the main channel runs between the source and drain, and the gate controls whether current flows in this channel or not. That makes it useful for switching applications as it can be used to turn a circuit on or off at will. It’s also ideal for use in applications where low power consumption is important, like battery-operated electrical devices.
APTM100DA18T1G has many applications. It is commonly used in designs where low on-resistance is critical. This makes it suitable for compact DC/DC converters, regulators and low-noise amplifiers. It can also be used in battery management systems, such as those in battery-powered laptops and mobile phones. Additionally, APTM100DA18T1G is well suited for applications in which thermal stability is important. This makes it perfect for use in sensors and protective circuits.
The working principle of APTM100DA18T1G is simple. The gate of the FET controls the flow of electrons between the source and the drain. When a voltage is applied to the gate, an electric field is created between the gate and the source, this electric field attracts electrons through the gate and into the main channel. This flow of electrons creates a current which can be used to switch on a circuit or perform some other operation.
When the voltage on the gate is removed, the electric field dissipates and the flow of electrons is reduced. This reduces the current flowing in the main channel, effectively turning the circuit off. The gate can also act as a variable resistor which can be used to control the current flowing in the channel. This makes the FET well suited for use in applications where fine control over a low-power circuit is required.
In summary, APTM100DA18T1G is a single-gate MOSFET with low power consumption and great performance. It is commonly used in applications where low on-resistance and thermal stability are important, such as DC/DC converters and battery management systems. The working principle of the APTM100DA18T1G is simple; it relies on the control of the electric field between the gate and the source to control the flow of electrons. This makes it ideal for switching operations and applications where fine control is needed.
The specific data is subject to PDF, and the above content is for reference
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