Allicdata Part #: | APTM100SK18TG-ND |
Manufacturer Part#: |
APTM100SK18TG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 1000V 43A SP4 |
More Detail: | N-Channel 1000V 43A (Tc) 780W (Tc) Chassis Mount S... |
DataSheet: | APTM100SK18TG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 5mA |
Package / Case: | SP4 |
Supplier Device Package: | SP4 |
Mounting Type: | Chassis Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 780W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 10400pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 372nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 210 mOhm @ 21.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 43A (Tc) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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The APTM100SK18TG is a single N-Channel enhancement mode Field-Effect Transistor (FET) designed for power switching applications. The transistor has high power and low on-resistance, making it ideal for high-power, low loss switching and general circuit protection. This transistor has an unlimited drain current rating and excellent surge withstand capability.
An enhancement mode FET is a type of field-effect transistor which works by applying a low-level gate voltage to the gate terminal of its input. When the gate voltage is increased, holes in the semiconductor material become “trapped” within the gate region, and this increases the resistance between the source and drain. In this state, no current can pass through since the voltage difference between the source and drain is too low.
The APTM100SK18TG has a gate threshold voltage of around 4 volts, and the on-resistance or RDSON is listed as 0.1ohms. When the FET is turned on, the drain current can jump up to around 100A, which is appropriate for powering devices and switching loads. The device also has a maximum drain-source voltage of 180V, which is well suited for operation on industrial circuits. The FET also has low input capacitance and high frequency capability, making it suitable for use in high frequency circuits.
The device is typically used for switching power supplies, switching audio amplifiers, and providing protection for various circuits. As the device has a low on-resistance and is capable of handling high currents, it is ideal for high-power, low-loss switching applications. The device’s high frequency capability makes it suitable for use in audio amplifiers, where it can be used to switch audio inputs and outputs without introducing any distortion.
The device works by controlling the flow of current through it. When the gate voltage is increased, more holes are “trapped” and the resistance between the source and drain increases, stopping current from passing through. When the gate voltage is lowered, the holes in the semiconductor material are released and the resistance between the source and drain is reduced, allowing current to flow through. This makes the device suitable for switching and control applications, as the gate voltage can be used to control the amount of current passing through the device.
The APTM100SK18TG is a versatile power switch and is suitable for a wide range of applications. Its low on resistance and high drain current rating make it ideal for high-power, low-loss switching, while its high frequency capability makes it idealfor audio amplifiers. The device is also suitable for use in any circuit where power switching and control is desired, making it a versatile and useful choice when it comes to power switching.
The specific data is subject to PDF, and the above content is for reference
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