Allicdata Part #: | APTM100SK33T1G-ND |
Manufacturer Part#: |
APTM100SK33T1G |
Price: | $ 20.97 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 1000V 23A SP1 |
More Detail: | N-Channel 1000V 23A (Tc) 390W (Tc) Chassis Mount S... |
DataSheet: | APTM100SK33T1G Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 19.05730 |
Vgs(th) (Max) @ Id: | 5V @ 2.5mA |
Package / Case: | SP1 |
Supplier Device Package: | SP1 |
Mounting Type: | Chassis Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 390W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7868pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 305nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 396 mOhm @ 18A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 23A (Tc) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Bulk |
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The APTM100SK33T1G is a single high-voltage MOSFET manufactured by Alpha & Omega Semiconductor and is specifically designed for consumer applications. This MOSFET is designed for low conduction and blocking losses, has low output capacitance, and can handle typical load currents of up to 40A. The APTM100SK33T1G is offered in a through-hole package, making it ideal for easy prototyping and customization.
MOSFETs are an important component of modern electronics, and are used across a wide range of applications. In general, they act as a switch or amplifier, and can be used to control the flow of current, voltage, or power. The APTM100SK33T1G is mostly used in consumer applications, such as home appliances, lighting, white goods, and industrial control systems. This MOSFET can also be used in digital circuits and motor control, where it can provide a very efficient switching solution.
As a single MOSFET (Metal-oxide-semiconductor, field-effect transistor) device, the APTM100SK33T1G is capable of being switched on and off quickly, making it suitable for use in high-frequency switching applications. It has improved switching characteristics over other power MOSFETs, making it a good choice for high-load applications. In addition, the device exhibits very low capacitance, which is ideal for fasterswitch edges and higher frequency applications. This MOSFET also has high-voltage ratings, –20V to +20V, and drain-source breakdown voltage rating of 120V.
The APTM100SK33T1G MOSFET operates on the principle of drain-gate voltage control. The MOSFET works by allowing an electric current to pass through it when a voltage is applied to its gate. This voltage controls the flow of current from the source to the drain terminals. By controlling the gate voltage, the MOSFET can be switched on and off, allowing the current to flow to the drain terminal. By adjusting the gate voltage, the MOSFET can also be used to regulate the flow of current, making it useful for voltage regulation. The low gate threshold voltage of the APTM100SK33T1G makes it suitable for use in low-voltage circuits.
The APTM100SK33T1G is a versatile, reliable, and efficient single MOSFET device that is ideal for a variety of applications. Its low conduction loss, low output capacitance, and high-voltage ratings make it suitable for high-power applications, while its gate threshold voltage and switching characteristics make it suitable for high-frequency, low-voltage circuits. With its through-hole package, the APTM100SK33T1G is also easy to prototype and can be used in a variety of consumer, industrial, and digital applications.
The specific data is subject to PDF, and the above content is for reference
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