Allicdata Part #: | APTM120DA30CT1G-ND |
Manufacturer Part#: |
APTM120DA30CT1G |
Price: | $ 46.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 1200V 31A SP1 |
More Detail: | N-Channel 1200V 31A (Tc) 657W (Tc) Chassis Mount S... |
DataSheet: | APTM120DA30CT1G Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 41.87300 |
Vgs(th) (Max) @ Id: | 5V @ 2.5mA |
Package / Case: | SP1 |
Supplier Device Package: | SP1 |
Mounting Type: | Chassis Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 657W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 14560pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 560nC @ 10V |
Series: | POWER MOS 8™ |
Rds On (Max) @ Id, Vgs: | 360 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 31A (Tc) |
Drain to Source Voltage (Vdss): | 1200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Bulk |
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APTM120DA30CT1G is a member of the advanced range of N-channel logic level MOSFETs from STMicroelectronics. It is a low on-resistance MOSFET that is available in a TO−263AB (D2PAK) package.
The APTM120DA30CT1G is a MOSFET (metal-oxide semiconductor field-effect transistor) with very low on-resistance, high frequency operation and very short recovery times. It has a decreased switching time due to its lower gate charge and improved di/dt capabilities. This makes it suitable for high frequency applications.
The APTM120DA30CT1G is designed primarily for applications such as DC-DC regulated voltage switch, discharge and charge pump circuits, high-side switches in car audio, medical and power management, and high-current switches in computer systems. It is also suitable for reading, writing and erasing circuits.
The APTM120DA30CT1G works on the principle of the MOSFET where a MOSFET is an insulated gate field-effect transistor that uses a gate voltage to control the current flow in an electric circuit. It has four terminals: the source terminal, the drain terminal, the gate terminal and the body terminal. The source terminal is connected to the most negative voltage, the drain terminal is connected to the most positive voltage and the gate terminal is connected to the control voltage.
When a positive voltage is applied to the gate terminal, it is attracted to the gate oxide, creating an inversion layer. The inversion layer is then connected to the substrate, providing a conductive path between the source and the drain terminals, thus allowing current to flow through the device. The body terminal, or the substrate terminal, is used to inject charge carriers into the substrate in order to form the inversion layer.
The fast switching speed of the APTM120DA30CT1G makes it an ideal choice when it comes to applications that require high frequency switching, such as DC-DC voltage regulation, switching in power management circuits and high-current switching in computer systems. It also works well in applications such as read, write and erase circuits. The device is also capable of providing low on-resistance, which improves efficiency and reduces power loss.
The APTM120DA30CT1G is a very reliable MOSFET and is well suited for a wide range of applications. It provides high frequency operation, low on-resistance and fast switching speed which makes it an appropriate choice for high-current power management, DC-DC voltage regulation and other high-frequency switching applications.
The specific data is subject to PDF, and the above content is for reference
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