
Allicdata Part #: | APTM120SK29TG-ND |
Manufacturer Part#: |
APTM120SK29TG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 1200V 34A SP4 |
More Detail: | N-Channel 1200V 34A (Tc) 780W (Tc) Chassis Mount S... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 5mA |
Package / Case: | SP4 |
Supplier Device Package: | SP4 |
Mounting Type: | Chassis Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 780W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 10300pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 374nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 348 mOhm @ 17A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 34A (Tc) |
Drain to Source Voltage (Vdss): | 1200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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The APTM120SK29TG is a single N-Channel Enhancement Mode MOSFET. It is an advanced Power MOSFET which was developed to minimize the on-state resistance and enhance the switching speed of the transistor. The APTM120SK29TG is manufactured with high quality Silicon Wafers and has a unique structure of the die which provides excellent switching performance and low gate charge.
The APTM120SK29TG is commonly used in a wide range of applications, such as motor control, powermanagement, audio power devices and home appliances. It has high ESD protection, good linearity and high efficiency. This type of device also has a very low input capacitance so it can be used in fast-switching applications. It has a maximum drain-source voltage of 20V and a current rating of 12A.
The working principle of the APTM120SK29TG is based on the enhancement mode of operation. This means that the current can flow through the device if there is a gate voltage above the gate threshold voltage. The gate voltage must be greater than the gate threshold voltage in order to turn the device on. Once the gate voltage is applied, the current flows through the device, causing a drain-source voltage drop.
The APTM120SK29TG has a threshold voltage of 1.7V which is the minimum gate voltage required for it to be turned on. When the gate voltage is increased, the drain-source voltage drop increases which results in higher current through the device. This feature makes the APTM120SK29TG suitable for use in applications where fast switching times are required. It also has a very low gate charge so minimal energy is needed for it to be turned on.
In summary, the APTM120SK29TG is a single N-Channel Enhancement Mode MOSFET which can be used in a wide variety of applications including motor control, power management, audio power devices and home appliances. It has a maximum drain-source voltage of 20V and a current rating of 12A and it has a low gate charge and fast switching time. This makes it particularly suitable for applications that require fast switching times and very low power consumption.
The specific data is subject to PDF, and the above content is for reference
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